JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD101AWS SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance MARKING: S1 MAXIMUM RATINGS ( T =25 unless otherwise noted ) A Symbol Parameter Value Unit Repetitive Peak Reverse Voltage V RRM 60 V V Working Peak Reverse Voltage RWM V DC Blocking Voltage R V RMS reverse voltage 42 V R(RMS) I Forward Continuous Current 15 mA FM 50 mA Non-repetitive Peak Forward Surge Current t 1s I FSM t=10s 2 A Power Dissipation 200 mW P D R Thermal Resistance from Junction to Ambient 500 /W JA T Junction Temperature 125 j T Storage Temperature -50~+150 stg ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V I =10A 60 V Reverse voltage (BR) R Reverse current I V =50V 0.2 A R R I =1mA 0.41 F Forward voltage V V F IF=15mA 1 Total capacitance C V =0V,f=1MHz 2 pF tot R Reverse recovery time t I = I =5mA, I =0.1I , R =100 1 ns rr F R rr R L A,Sep,2010 X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Schottky Diodes & Rectifiers category: Click to view products by Changjiang manufacturer: Other Similar products are found below : CUS06(TE85L,Q,M) MA4E2039 D1FH3-5063 MBR0530L-TP MBR10100CT-BP MBR30H100MFST1G MMBD301M3T5G PMAD1103- LF PMAD1108-LF RB160M-50TR RB520S-30 RB551V-30 DD350N18K DZ435N40K DZ600N16K BAS16E6433HTMA1 BAS 3010S- 02LRH E6327 BAT 54-02LRH E6327 IDL02G65C5XUMA1 NSR05F40QNXT5G NSVR05F40NXT5G JANS1N6640 SB07-03C-TB-H SB1003M3-TL-W SBAT54CWT1G SBM30-03-TR-E SBS818-TL-E SK32A-LTP SK33A-TP SK34A-TP SK34B-TP SMD1200PL-TP ACDBN160-HF SS3003CH-TL-E STPS30S45CW PDS3100Q-7 GA01SHT18 CRS10I30A(TE85L,QM MBR1240MFST1G MBRB30H30CT-1G BAS28E6433HTMA1 BAS 70-02L E6327 HSB123JTR-E JANTX1N5712-1 VS-STPS40L45CW-N3 DD350N12K SB007-03C-TB-E SB10015M-TL-E SB1003M3-TL-E SK110-LTP