DMN2058UW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I Max
D Low On-Resistance
BV R Max
DSS DS(ON)
T = +25C
A
Low Input Capacitance
3.5A
42m @ V = 10V
GS
Fast Switching Speed
20V
3.3A
45m @ V = 4.5V
GS
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
Mechanical Data
(R ) and yet maintain superior switching performance, making it
DS(ON)
Case: SOT323
ideal for high efficiency power management applications.
Case Material: Molded Plastic, Green Molding
Compound. UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Motor Control
Terminals: Finish Matte Tin Annealed over Alloy 42
Power Management Functions
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Backlighting
Weight: 0.006 grams (Approximate)
D
SOT323
D
G
G S
S
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN2058UW-7 SOT323 3000/Tape & Reel
DMN2058UW-13 SOT323 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
DMN2058UW
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 20 V
DSS
Gate-Source Voltage V 12 V
GSS
Steady T = +25C 3.5
A
Continuous Drain Current (Note 6) V = 10V I A
GS D
State 3.0
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) 1.0 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) 20 A
I
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 0.5 mW
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5) R 259 C/W
JA
Total Power Dissipation (Note 6) 0.7 mW
PD
Thermal Resistance, Junction to Ambient (Note 6) Steady State 175 C/W
R
JA
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 12V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.4 1.2 V V = V , I = 250A
GS(TH) DS GS D
31.5
42 V = 10V, I = 3A
GS D
32 45
V = 4.5V, I = 2A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
40.5 60
V = 2.5V, I = 2A
GS D
48 91
V = 1.8V, I = 1A
GS D
Diode Forward Voltage 0.78 1.2 V
V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 281 pF
iss
V = 10V, V = 0V
DS GS
Output Capacitance C 50 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 39 pF
rss
Gate Resistance R 3.1 f = 1.0MHz , V = 0V, V = 0V
g GS DS
Total Gate Charge (V = 4.5V) Q 3.6 nC
GS g
Total Gate Charge (V = 10V) Q 7.7 nC
GS g
V = 10V, I = 6.0A
DS D
Gate-Source Charge 0.5 nC
Q
gs
Gate-Drain Charge 0.9 nC
Q
gd
Turn-On Delay Time 2.0 ns
t
D(ON)
Turn-On Rise Time 4.9 ns
t V = 4.5V, V = 10V, Rg = 6,
R GS DD
Turn-Off Delay Time t 9.9 ns I = 6.0A
D(OFF) D
Turn-Off Fall Time t 3.3 ns
F
Body Diode Reverse Recovery Time t 5.4 ns I = 6.0A, di/dt = 100A/s
RR F
Body Diode Reverse Recovery Charge Q 0.7 nC I = 6.0A, di/dt = 100A/s
RR F
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN2058UW February 2018
Diodes Incorporated
www.diodes.com
Document number: DS40456 Rev. 3- 2
NEW PRODUCT