General Purpose Silicon Rectifiers 1N4001-G Thru. 1N4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device DO-41 Features - Low cost construction. - Fast forward voltage drop. - Low reverse leakage. 1.000(25.40) Min. - High forward surge current capability. O - High soldering temperature guarantee: 260 C/10 seconds, 0.375(9.5mm) lead length at 5lbs(2.3kg) tension. 0.205(5.21) 0.161(4.10) Mechanical data 0.117(2.97) DIA. - Case: Transfer molded plastic, DO-41 0.078(2.00) DIA. - Epoxy: UL 94V-0 rate flame retardant 1.000(25.40) Min. - Polarity: Indicated by cathode band - Lead: Plated axial lead, solderable per MIL-STD-750, method 2026 0.035(0.90) DIA. 0.027(0.70) DIA. - Mounting position: Any - Weight: 0.012ounce, 0.34 grams(approx.). Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. 1N 4001 1N 4002 1N 4003 1N 4004 1N 1N 4006 1N 4007 4005 Parameter Symbol Unit -G -G -G -G -G -G -G Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V VDC 50 100 200 400 600 800 1000 Maximum Average Forward Rectified Current A I(AV) 1.0 0.375 (9.5mm) Lead Length TA=55C Peak Forward Surge Current, 8.3mS single half sine-wave superimposed on IFSM 30 A rated load (JEDEC method) Maximum Instantaneous Forward Voltage 1.0A VF 1.1 V TA=25C 5.0 Maximum DC Reverse Current at Rated A IR DC Blocking voltage per element TA=100C 50 Typical Junction Capacitance (Note 1) pF CJ 15 Typical Thermal Resistance (Note 2) R JA 60 C/W Operating Temperature Range TJ -55 ~ +150 C Storage Ttemperature Range TSTG -55 ~ +150 C NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal Resistance from junction to ambient and junction to lead at 0.375(9.5mm) lead length P.C.B mounted. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BG013 Page 1 Comchip Technology CO., LTD.General Purpose Silicon Rectifiers Rating and Characteristic Curves ( 1N4001-G Thru. 1N4007-G) Fig.1 - Typical Forward Current Fig.2 - Maximum. Non-Repetitive Peak Derating Curve Forward Surge Current 1.2 35 8.3mS, single half sine-wave, JEDEC method. 30 1.0 TJ=TJmax 25 0.8 20 0.6 15 0.4 10 Single phase Half wave, 60Hz 0.2 5 Resistive or inductive load 0 0 150 175 1 2 5 10 20 50 100 0 25 50 75 100 125 Ambient Temperature, TA (C) Number of Cycles at 60Hz Fig.3 - Typical Instantaneous Forward Fig.4 - Typical Reverse Characteristics Characteristics 10 10 O TJ=100 C 1.0 1.0 0.1 0.1 O TJ=25 Pulse width=300s. C 1% duty cycle TJ=25C 0.01 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, VF (V) Percent of Peak Reverse Voltage, (%) Fig.5 - Typical Junction Capacitance 100 f=1MHz O TJ=25 C 10 10 0.1 1 10 100 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BG013 Page 2 Comchip Technology CO., LTD. Capacitance, CJ (pF) Instantaneous Forward Current, IF (A) Average Forward Current, I(AV) (A) Peak Forward Surge Current, FSM (A) Instantaneous Reverse Current, IR (mA)