Schottky Barrier Rectiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device DO-41 Features - Metal-Semiconductor junction with guard ring. 0.030(0.75) - Epitaxial construction. DIA. 0.020(0.50) - Low forward voltage drop. 1.000(25.40) Min. - High current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. 0.205(5.20) 0.161(4.10) 0.106(2.70) DIA. 0.079(2.00) Mechanical data 1.000(25.40) Min. - Case: JEDEC DO-41 molded plastic - Epoxy: UL 94V-0 rate ame retardant - Polarity: Color band denotes cathode Dimensions in inches and (millimeter) - Mounting position: Any Circuit Diagram Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol 1N5817-G 1N5818-G 1N5819-G Parameter Unit Maximum recurrent peak reverse voltage VRRM 20 30 40 V Maximum RMS voltage VRMS 14 21 28 V Maximum DC blocking voltage VDC 20 30 40 V Maximum average forward rectied current TA=75C I(AV) 1.0 A Peak forward surge current, 8.3ms single half sine-wave IFSM 25 A superimposed on rated load (JEDEC method) Maximum forward voltage at 1.0A DC VF 0.450 0.550 0.600 V Maximum forward voltage at 3.0A DC VF 0.750 0.875 0.900 V TJ=25C 1.0 Maximum DC reverse current IR mA at rated DC blocking voltage TJ=100C 10 Typical junction capacitance (Note 1) pF CJ 110 Typical thermal resistance (Note 2) R JA 80 C/W Operating temperature range TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance junction to ambient. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BG016 Page 1 Comchip Technology CO., LTD.Schottky Barrier Rectiers Rating and Characteristic Curves (1N5817-G Thru.1N5819-G) Fig.2 - Maximum Non-Repetitive Fig.1 - Forward Current Derating Curve Surge Current 40 1.2 Pulse width 8.3ms single half sine-wave (JEDEC Method) 1.0 30 0.8 0.6 20 0.4 10 Single phase Half wave, 60Hz 0.2 Resistive or inductive load 0 0 1 10 100 150 175 0 25 50 75 100 125 Ambient Temperature, (C) Number of Cycles at 60Hz Fig.3 - Typical Junction Capacitance Fig.4 - Typical Forward Characteristics 1000 10 f = 1MHz TJ = 25C 100 1.0 TJ = 25C Pulse width 300s 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 Instantaneous Forward Voltage, (V) Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BG016 Page 2 Comchip Technology CO., LTD. 1N5817 1N5819 1N5818 Capacitance, (pF) Average Forward Current, (A) Instantaneous Forward Current, (A) Peak Forward Surge Current, (A)
