SMD Schottky Barrier Diode ACDBA3100-HF Reverse Voltage: 100 Volts Forward Current: 3 Amp RoHS Device DO-214AC (SMA) Halogen free 0.065 (1.65) Features 0.110 (2.79) 0.049 (1.25) 0.100 (2.54) - Low profile package. - Ideal for automated placement. 0.177 (4.50) 0.157 (3.99) - Low forward voltage drop. 0.012 (0.305) - High surge capability. 0.006 (0.152) - Guard ring for overvoltage protection. 0.090 (2.29) - Comply with AEC-Q101 0.078 (1.98) 0.008(0.20) Mechanical data 0.060 (1.52) MAX. 0.030 (0.76) - Case: DO-214AC / SMA, molded plastic. 0.208 (5.28) 0.193 (4.90) - Epoxy: UL flammability classification rate 94V-0 . Dimensions in inches and (millimeter) - Terminals: Lead free plating (Tin finish). -Solderable per MIL-STD-202, Method 208. Circuit Diagram - Polarity: Cathode band. - Weight: 0.062 grams(approx.). Maximum Ratings (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Repetitive peak reverse voltage VRRM 100 V RMS voltage VRMS 70 V DC blocking voltage 100 VDC V Average forward rectified current IF 3 A 8.3ms single half sine-wave superimposed Peak forward surge current IFSM 80 A on rated load (JEDEC method) Operating temperature range TJ -55 +150 C Storage temperature range TSTG -55 +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Forward voltage IF = 3A VF 0.85 V VR =VRRM, TA=25C 0.2 IR mA Reverse current VR =VRRM, TA=100C IR 5.0 mA Junction capacitance f=1MHZ and applied 4V DC reverse Voltage pF CJ 100 Thermal resistance Junction to case R Jc 25 C/W Note: 1. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. Company reserves the right to improve product design , functions and reliability without notice. REV: A AQW-JB019 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (ACDBA3100-HF) Fig.1 - Typical Forward Current Fig.2 - Typical Forward Characteristics Derating Curve 5.0 100 TJ=25C Pulse Width 300us 2% Duty Cycle 4.0 10 3.0 1.0 2.0 0.1 1.0 0 0.01 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 Case Temperature, (C) Forward Voltage, (V) Fig.3 - Maximum Non-Repetitive Fig.4 - Typical Reverse Characteristics Forward Surge Current 100 100 8.3ms Single Half Sine-Wave (JEDEC Method) TJ=25C 80 10 100C 60 1 40 0.1 25C 20 0.01 0 0.001 10 100 20 30 40 50 60 70 80 90 100 1 Percent of Peak Reverse Voltage, (%) Number of Cycles at 60Hz Fig.5 - Typical Junction Capacitance 500 400 300 200 100 0 0.1 1.0 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: A AQW-JB019 Page 2 Comchip Technology CO., LTD. Junction Capacitance, (pF) Average Forward Current, (A) Peak Forward Surge Current, (A) Reverse Leakage Current, (mA) Instantaneous Forward Current, (A)