SMD Schottky Barrier Diode ACDBCT320-HF Thru. ACDBCT3100-HF Forward current: 3.0A Reverse voltage: 20 to 100V RoHS Device Halogen Free 3220 0.319(8.10) 0.311(7.90) Features - Lead less chip form, no lead damage. 0.201(5.10) 0.193(4.90) - Low power loss, High efficiency. - High current capability, low VF 0.154(3.90) Typ. - Plastic package has UL 94V-0. - Comply with AEC-Q101 0.081(2.05) 0.081(2.05) 0.073(1.85) 0.073(1.85) 0.049(1.25) Mechanical Data 0.037(0.95) - Case: Packed with FRP substrate and epoxy underfilled. - Terminals: Pure Tin plated (Lead-Free), solderable Dimensions in inches and (millimeter) per MIL-STD-750, method 2026. - Polarity: Laser cathode band marking. Circuit diagram - Weight: 0.093 grams (approx). Maximum Ratings (At Ta=25C, unless otherwise noted) Symbol ACDBCT320-HF ACDBCT340-HF ACDBCT360-HF ACDBCT3100-HF Parameter Unit Non-repetitive peak reverse voltage VRM 20 40 60 100 V Average forward current IF(AV) 3 A Peak forward surge current IFSM 100 A 8.3ms single half sine-wave Operating junction temperature range TJ -55 to +125 -55 to +150 C Storage temperature TSTG -55 ~ +150 C Electrical Characteristics (At Ta=25C, unless otherwise noted) Symbol Parameter Min. Typ. Max. Unit Conditions Type - - IF=0.5A 0.33 ACDBCT320-HF - - IF=1.0A 0.38 ACDBCT340-HF - IF=3.0A 0.47 0.50 - - IF=0.5A 0.38 - - Forward voltage (Note1) IF=1.0A ACDBCT360-HF 0.48 VF V - IF=3.0A 0.65 0.70 - - IF=0.5A 0.48 - - IF=1.0A ACDBCT3100-HF 0.58 - IF=3.0A 0.78 0.85 Reverse peak reverse current - VR=Max.VRRM, Ta=25C IRRM 0.025 0.5 mA Junction capacitance Cj - - pF VR=4V, f=1.0MHz 180 - - Junction to ambient (Note 2) R JA 55 C/W Thermal resistance - - Junction to lead (Note 2) R JL 17 C/W Notes: (1) Pulse test width pw=300usec, 1% duty cycle. (2)Mounted on P.C. board with 0.2*0.2(5.0*5.0mm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:C AQW-JB002 Page 1 Comchip Technology CO., LTD. R0.032(0.82) R0.031(0.78)ACDBCT360-HF Thru. ACDBCT3100-HF ACDBCT320-HF Thru. ACDBCT340-HF SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (ACDBCT320-HF Thru. ACDBCT3100-HF) Fig.1 - Typical Forward Current Derating Curve Fig.2 - Maximum Non-Repetitive Peak Forward Surge Current 3.0 120 8.3ms Single Half Sine-Wave (JEDEC Method) 100 80 2.0 60 1.0 40 20 Resistive or inductive load P.C.B Mounted on 0.2*0.2(5.0*5.0mm) Copper pad areas 0 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature, (C) Number of Cycles at 60Hz Fig.3 - Typical Instantaneous Forward Fig.4 - Typical Reverse Characteristics Characteristics 10 100 10 1.00 TJ=100C 1.0 0.1 0.1 O TJ=25 C 0.01 ACDBCT320-HF Thru ACDBCT340-HF ACDBCT360-HF ACDBCT3100-HF 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 Instantaneous forward voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5 - Typical Junction Capacitance 400 O TJ=25 C f=1MHz Vsig=50mVP-P 100 10 0.1 1 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:C AQW-JB002 Page 2 Comchip Technology CO., LTD. Junction Capacitance, (pF) Instantaneous forward current, (A) Average Forward Rectified Current, (A) Instantaneous Reverse Voltage, (mA) Peak Forward Surge Current, (A)
