SMD Schottky Barrier Rectifiers ACDBN120-HF Thru. ACDBN1100-HF Forward current: 1.0A Reverse voltage: 20 to 100V RoHS Device 1206 Halogen Free 0.142(3.60) 0.126(3.20) Features - Lead less chip form, no lead damage. 0.083(2.10) R 0.016(0.40) 0.067(1.70) - Low power loss, High efficiency. - High current capability, low VF. 0.063(1.60) - Plastic package has UL 94V-0. Typ. - Comply with AEC-Q101 0.035(0.90) 0.035(0.90) 0.020(0.50) 0.020(0.50) Mechanical Data 0.046(1.16) 0.034(0.86) - Case: Packed with FRP substrate and epoxy underfilled. - Terminals: Pure Tin plated (Lead-Free),solderable Dimensions in inches and (millimeter) per MIL-STD-750, method 2026. - Polarity: Laser cathode band marking. Circuit diagram - Weight: 0.012 grams (approx). Maximum Ratings (At Ta=25C, unless otherwise noted) Symbol ACDBN120-HF ACDBN140-HF ACDBN160-HF ACDBN1100-HF Parameter Unit Repetitive peak reverse voltage VRRM 20 40 60 100 V Average forward current IF(AV) 1.0 A Peak forward surge current IFSM 20 A 8.3ms single half sine-wave Operating junction temperature range TJ -55 to +125 -55 to +150 C Storage temperature range TSTG -55 ~ +150 C Electrical Characteristics (At Ta=25C, unless otherwise noted) Symbol Parameter Min. Typ. Max. Unit Conditions Type IF=0.1A 0.32 ACDBN120-HF IF=0.5A / 0.40 ACDBN140-HF IF=1.0A 0.46 0.50 IF=0.1A 0.35 Forward voltage (Note1) IF=0.5A ACDBN160-HF 0.48 VF V IF=1.0A 0.62 0.70 IF=0.1A 0.45 IF=0.5A ACDBN1100-HF 0.66 IF=1.0A 0.76 0.85 Reverse peak reverse current (Note1) VR=Max.VRRM, Ta=25C IRRM 0.015 0.2 mA Junction capacitance Cj pF VR=4V, f=1.0MHz 110 Junction to ambient (Note 2) R JA 88 C/W Thermal resistance Junction to lead (Note 2) R JL 28 C/W Notes: (1) Pulse test width pw=300usec, 1% duty cycle. (2) Mounted on P.C. board with 0.2*0.2(5.0*5.0mm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JB004 Page 1 Comchip Technology CO., LTD.ACDBN160-HF Thru. ACDBN1100-HF ACDBN120-HF Thru. ACDBN140-HF SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (ACDBN120-HF Thru. ACDBN1100-HF) Fig.2 - Maximum Non-Repetitive Peak Fig.1 - Forward Current Derating Curve Forward Surge Current 1.0 25 8.3ms Single Half Sine-Wave (JEDEC Method) 20 15 0.5 10 5 Resistive or Inductive Load P.C.B. Mounted on 0.2x0.2 (5.0x5.0mm) Copper Pad Areas 0 0 0 50 70 90 110 130 150 170 1 10 100 Case Temperature, (C) Number of Cycles at 60Hz Fig.3 - Typical Instantaneous Forward Fig.4- Typical Reverse Characteristics Characteristics 10 100 ACDBN160-HF 10 1.00 ACDBN120-HF ~ 140-HF TJ=100C 1.0 0.1 ACDBN1100-HF 0.1 0.01 O TJ=25 C 0.01 Ta=25C 0.001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 20 40 60 80 100 Forward Voltage, (V) Percent of Rated Peak Reverse Voltage (%) Fig.5 - Typical Junction Capacitance 400 TJ=25C f=1MHz Vsig=50mVP-P 100 10 0.1 1 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JB004 Page 2 Comchip Technology CO., LTD. Junction Capacitance, (pF) Instantaneous Forward Current, (A) Average Forward Rectified Current, (A) Instantaneous Reverse Voltage, (mA) Peak Forward Surge Current, (A)