SMD Efficient Fast Recovery Rectifiers ACEFN103-HF Forward current: 1.0A Reverse voltage: 600V RoHS Device 1206 Halogen Free 0.142 (3.60) 0.126 (3.20) Features 0.083 (2.10) - GPRC(Glass passivated rectifier chip) inside. R 0.016 (0.40) 0.067 (1.70) - Glass passivated cavity-free junction. - Low power loss, High efficiency. 0.063(1.60) Typ. - High current capability - Plastic package has UL 94V-0. 0.035 (0.90) - Comply with AEC-Q101 0.035 (0.90) 0.020 (0.50) 0.020 (0.50) 0.046 (1.16) 0.034 (0.86) Mechanical Data - Case: Packed with FRP substrate and epoxy underfilled. Dimensions in inches and (millimeter) - Terminals: Pure Tin plated (Lead-Free),solderable per MIL-STD-750, method 2026. Circuit diagram - Polarity: Laser cathode band marking. - Weight: 0.012 grams(approx). Absolute Maximum Ratings (at TA=25C unless otherwise noted) Symbol Units ACEFN103-HF Parameter Conditions 167 Marking .Z. Repetitive peak reverse voltage VRRM 600 V Average forward current TL=110C IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave IFSM 25 A Reverse recovery time IF=0.5A,IR=1.0A,Irr=0.25A 35 Trr nS Operating junction temperature TJ -65 to +175 C Storage temperature TSTG -65 to +175 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions MIN. TYP. MAX. Unit --- IF =0.1A 0.80 - --- Forward voltage IF =0.5A VF 1.15 - V --- IF =1.0A 1.40 1.70 --- Repetitive peak reverse current VR =Max. VRRM, TA=25C IRRM 0.20 5 uA --- --- Junction capacitance pF VR =4V, f=1.0MHZ CJ 10 Junction to ambient (Note) --- --- R JA 80 Thermal Resistance C/W Junction to lead (Note) --- --- R JL 40 Notes: 1. Thermal resistance from junction to ambient and from junction to lead P.C.B. monuted on 0.20.2(5.0*5.0mm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JE001 Page 1 Comchip Technology CO., LTD.SMD Efficient Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (ACEFN103-HF) Fig.1- Forward current derating curve Fig.2- Maximum non-repetitive peak forward surge current 1.0 30 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 0.5 15 10 5 0 0 0 50 70 100 125 150 175 200 1 10 100 Case temperature, (C) Number of cycles at 60Hz Fig.3- Typical instantaneous forward Fig.4- Typical Reverse Characteristics characteristics 10 100 TJ=150C 10 1.0 TJ=125C 1 0.1 TJ=25C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.01 0.2 0.6 1.0 1.4 1.8 2.2 0 20 40 60 80 100 110 Instantaneous forward voltage, (V) Percent of rated peak reverse voltage (%) Fig.5 - Typical junction capacitance 200 TJ=25C 10 1 0.1 1 10 100 Reverse voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B AQW-JE001 Page 2 Comchip Technology CO., LTD. Junction capacitance, (pF) Instantaneous forward current, (A) Average forward rectified current, (A) Instantaneous reverse leakage Peak forward surge current, (A) current, (uA)