SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 (0.80) 0.019 (0.50) -Ideal for printed circuit board. - + -Reliable low cost construction utilizing 0.165 (4.20) molded plastic technique results in 0.150 (3.80) X X X inexpensive product. -Pb free product. 0.014 (0.35) 0.006 (0.15) 0.106 (2.70) 0.090 (2.30) 0.275 (7.0) max Mechanical data -Polarity: Symbol molded on body. 0.008 (0.20)max -Weight: 0.125 grams. -Mounting position: Any. 0.193 (4.90) 0.177 (4.50) 0.106 (2.70) 0.090 (2.30) Dimensions in inches and (millimeter) Maximum Rating And Electrical Characteristics Rating at TA=25C, unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol B05S-G B1S-G B2S-G B4S-G B6S-G B8S-G B10S-G Parameter Unit Marking B05S B1S B2S B4S B6S B8S B10S Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 800 1000 V 50 100 400 600 200 Maximum Average Forward Rectified 0.8 I(AV) A Current (Note 1) TA=40C Peak Forward Surge Current, 8.3mS single half sine-wave, superimposed on rated load 30 IFSM A (JEDEC Method) Maximum Forward Voltage at 0.8A DC VF 1.1 V Maximum DC Reverse Current TJ=25C 5.0 IR A at Rated DC Blocking Voltage TJ=125C 500 Typical Junction Capacitance 15 CJ pF per element (Note 2) Typical Thermal Resistance (Note 3) 75 R JA C/W -55 to +150 Operating Temperature Range TJ C Storage Temperature Range TSTG -55 to +150 C Notes: 1. Mounted on P.C. Board. 2. Measured at 1MHz and applied reverse voltage of 4V DC. 3. Thermal resistance: Junction to Ambient. REV:D QW-BBR01 Page 1 Comchip Technology CO., LTD.SMD General Purpose Bridge Rectifier Diode RATING AND CHARACTERISTIC CURVES (B05S-G thru B10S-G) Fig.1 - Forward Current Derating Curve Fig.2 - Maximum Non-Repetitive Surge Current 1.0 40 0.8 30 0.6 20 0.4 10 Mounted on PC board, 0.2 single phase half wave 60Hz Pulse width 8.3mS, resistive or inductive load single half-sine wave (JEDEC Method) 0.1 0 1 10 100 20 40 60 80 100 120 140 160 Number of Cycles at 60Hz Ambient temperature, (C) Fig.3 - Typical Reverse Characteristics Fig.4 - Typical Forward Characteristics 100 10 TJ=125C 10 1.0 1.0 TJ=25C 0.1 0.1 TJ=25C Pulse Width=300 S 0.01 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Percent of Rated Peak Reverse Voltage, (%) Instantaneous Forward Voltage, (V) Fig.5 - Typical Junction Capacitance 100 10 TJ=25C f=1MHz 1.0 1 10 100 Reverse Voltage, (V) REV:D QWQW-BBR01-BBR01 Page 2 Comchip Technology CO., LTD. Average Forward Current, (A) Capacitance, (pF) Instantaneous Reverse Current, (A) nsI tantaneous Forward Current, (A) Peak Forward Surge Current, (A)