Low VF Low IR SMD Schottky Barrier Rectifiers CDBB240LR-HF Thru. CDBB2200LR-HF Reverse Voltage: 40 to 200 Volts Forward Current: 2.0 Amp RoHS Device Halogen Free Features DO-214AA (SMB) -Low Profile surface mount applications in order to optimize board space. -Low power loss, high efficiency. 0.087 (2.20) 0.157 (4.00) 0.071 (1.80) -High current capability, low forward voltage drop. 0.130 (3.30) -High surge capability. 0.191 (4.85) -Guard ring for overvoltage protection. 0.157 (4.00) -Ultra high-speed switching. 0.012 (0.31) -Silicon epitaxial planar chip,metal silicon junction. MAX. 0.126 (3.20) Mechanical data 0.078 (1.99) -Epoxy: UL94-V0 rate flame retardant. 0.008(0.21) 0.063 (1.60) -Case: Molded plastic, DO-214AA / SMB MAX. 0.028 (0.70) 0.220 (5.60) -Terminals: solderable per MIL-STD-750, 0.197 (5.00) method 2026. -Polarity: Indicated by cathode band. Dimensions in inches and (millimeter) -Weight: 0.091 grams Maximum Ratings and Electrical Characteristics Ratings at Ta=25C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . CDBB CDBB CDBB CDBB CDBB Parameter Symbol Units 240LR-HF 260LR-HF 2100LR-HF 2150LR-HF 2200LR-HF Max. Repetitive peak reverse voltage VRRM 40 60 100 150 200 V Max. DC blocking voltage VDC 40 60 100 150 200 V Max. RMS voltage VRMS 28 42 70 105 140 V Max. Instantaneous forward voltage VF 0.45 0.55 0.75 0.82 0.85 V 2.0A, TA=25C Operating Temperature TJ -50 to +150 -50 to +175 C Symbol Parameter Conditions MIN. TYP. MAX. Units see Fig.1 Forward rectified current IO 2.0 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 70 A on rate load (JEDEC method) VR =VRRM TA=25C IR 0.5 mA Reverse Current VR =VRRM TA=100C IR 20 mA Thermal Resistance Junction to ambient RJA 50 C/W Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 30 pF Storage temperature TSTG -50 +175 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JL027 Page 1 Comchip Technology CO., LTD.CDBB240LR-HF~CDBB2100LR-HF CDBB2150LR-HF~CDBB2200LR-HF Low VF Low IR SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (CDBB240LR-HF Thru. CDBB2200LR-HF) Fig.1 - Typical Forward Current Fig.2 - Typical Forward Characteristics Derating Curve 100 2.4 10 2.0 3.03 1.6 1.0 1.2 0.8 0.1 TJ=25C 0.4 Pulse Width 300us 1% Duty Cycle 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 25 50 75 100 125 150 175 Ambient Temperature, (C) Forward Voltage, (V) Fig.3 - Maximum Non-repetitive Fig.4 - Typical Junction Capacitance Forward Surge Current 100 700 TJ=25C 8.3ms single half sine wave, JEDEC method 600 80 500 60 400 300 40 200 20 100 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz Reverse Voltage, (V) Fig.5 - Typical Reverse Characteristics 100 10 1.0 TJ=125 C 0.1 TJ=25 C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JL027 Page 2 Comchip Technology CO., LTD. CDBB240LR-HF CDBB260LR-HF CDBB2100LR-HF~CDBB2200LR-HF Reverse Leakage Current, (mA) Average Forward Current, (A) Peak Forward Surge Current, (A) Junction Capacitance, (pF) Instantaneous Forward Current, (A)