Chip Schottky Barrier Rectifier CDBD1040-G Thru. CDBD10200-G Reverse Voltage: 40 to 200 Volts Forward Current: 10.0 Amp RoHS Device D2PAK Features - Batch process design, excellent power dissipation offers 0.402(10.20) better reverse leakage current and thermal resistance. 0.386( 9.80) 0.046(1.20) 0.185(4.70) - Low power loss, high efficiency. 0.032(0.80) 0.169(4.30) - High current capability, low forward voltage drop. 0.055(1.40) - High surge capability. 0.047(1.20) - Guard ring for overvoltage protection. 2 0.370(9.40) - Ultra high-speed switching. 0.354(9.00) 0.012(0.30) - Silicon epitaxial planar chip, metal silicon junction. 0.004(0.10) 1 3 - Lead-free part meets environmental standards of 0.024(0.60) MIL-STD-19500 /228 0.016(0.40) 0.192(4.8) 0.063(1.60) 0.176(4.4) 0.055(1.40) 0.108(2.70) Mechanical data 0.205(5.20) 0.092(2.30) 0.189(4.80) - Case: TO-263/D2PAK, molded plastic. - Terminals: Solder plated, Solderable per Dimensions in inches and (millimeters) MIL-STD-750, method 2026. - Polarity: Indicated by cathode band. - Mounting Position: Any Circuit Diagram - Weight:1.46 grams (approx.). PIN 1 PIN 2 PIN 3 Maximum Ratings (At Ta=25C, unless otherwise noted) CDBD CDBD CDBD CDBD CDBD Symbol Unit Parameter 1040-G 1060-G 10100-G 10150-G 10200-G Repetitive peak reverse voltage VRRM 40 60 100 150 200 V Continuous reverse voltage VR 40 60 100 150 200 V RMS voltage VRMS 28 42 70 105 140 V Maximum forward rectified current IO 10.0 A (See fig. 1) Maximum forward voltage VF 0.55 0.75 0.85 1.00 V IF=5.0A Maxium forward surge current, 8.3ms singlehalf sine-wave superimposed on IFSM 150 A rate load (JEDEC method) VR=VRRM TA=25C IR 0.5 mA Maximum reverse current VR=VRRM TA=100C mA IR 50 Typical thermal Junction to Case RJc 3.0 C/W resistance Operating temperature C TJ -55 to +125 -55 to +150 Storage temperature TSTG -65 to +175 C Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BB033 Page 1 Comchip Technology CO., LTD. CDBD1060-G Thru. CDBD10200-G CDBD1040-G Chip Schottky Barrier Rectifier RATING AND CHARACTERISTIC CURVES (CDBD1040-G Thru. CDBD10200-G) FIG.1- Typical Forward Current Derating Curve FIG.2- Typical Forward Characteristics 100 12 10 10 8 6 1.0 4 2 0 0.1 0 20 40 60 80 100 120 140 160 180 200 Case Temperature, ( C) TJ=25 C Pulse Width 300us 1% Duty Cycle 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Forward Voltage, (V) FIG.3- Maximum Non-Repetitive Forward Surge Current 175 8.3ms Single Half TJ=25 C Sine Wave 150 JEDEC method 125 FIG.4 - Typical Reverse Characteristics 100 10 75 50 1.0 TJ=75 C 25 1 10 50 100 Number Of Cycles At 60Hz 0.1 TJ=25 C 0.01 0.001 0 20 40 60 80 100 120 140 Percent Of Rated Peak Reverse Voltage ,(%) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BB033 Page 2 Comchip Technology CO., LTD. CDBD10150-G~10200-G CDBD10100-G CDBD1060-G CDBD1040-G Average Forward Current, (A) Peak Forward Surge Current, (A) Instantaneous Forward Current, (A) Reverse Leakage Current, (mA)