Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 0.264(6.70) -Low profile surface mounted application in order to 0.248(6.30) 0.048(1.20) 0.098(2.50) 0.031(0.80) optimize board space. 0.217(5.50) 0.083(2.10) 0.201(5.10) -Low power loss, high efficiency. 0.024(0.60) -High current capability, low forward voltage drop. 0.016(0.40) -High surge capability. 0.244(6.20) -Guardring for overvoltage protection. 0.228(5.80) -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. 0.024(0.60) 0.016(0.40) 0.114(2.90) 0.039(1.00) -Lead-free parts meet environmental standards of 0.098(2.50) 0.031(0.80) MIL-STD-19500 /228 0.185(4.70) 0.169(4.30) 0.032(0.80) 0.016(0.40) Mechanical data -Case: TO-252/DPAK, molded plastic. Dimensions in inches and (millimeters) -Terminals: solderable per MIL-STD-750, method 2026. 2=4 -Polarity: Indicated by cathode band. -Weunting Position: Any -Weight:0.34 gram(approx.). 1 3 Maximum Ratings (At Ta=25C, unless otherwise noted) CDBD CDBD CDBD CDBD CDBD CDBD Symbol Parameter Unit 620-G 640-G 650-G 660-G 680-G 6100-G Repetitive peak reverse voltage VRRM 20 40 50 60 80 100 V Continuous reverse voltage VR 20 40 50 60 80 100 V RMS voltage VRMS V 14 28 35 42 56 70 Forward rectified current (See fig. 1) IO 6.0 A Maximum forward voltage VF 0.55 0.75 0.85 V IF=6.0A Forward surge current, 8.3ms single half sine-wave superimposed on rated IFSM 75 A load (JEDEC method) VR=VRRM TA=25C IR 0.5 mA Reverse current VR=VRRM TA=100C IR 20 mA Junction to ambient R JA 80 C/W Thermal resistance Junction to case 3.0 R JC C/W Operating temperature -55 to +125 -55 to +150 TJ C Storage temperature TSTG -65 to +175 C REV:A QW-BB032 Page 1 Comchip Technology CO., LTD.CDBD650-G~ CDBD6100-G CDBD620-G~CDBD640-G Chip Schottky Barrier Rectifier RATING AND CHARACTERISTIC CURVES (CDBD620-G Thru. CDBD6100-G) FIG.1-TYPICAL FORWARD CURRENT DERATING FIG.2-TYPICAL FORWARD CHARACTERISTICS CURVE 100 6 5 4 10 3 2 1 1.0 0 0 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,( C) TJ=25 C Pulse Width 300us 1% Duty Cycle 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FIG.3-MAXIMUM NON-REPETITIVE FORWARD FORWARD VOLTAGE,(V) SURGE CURRENT 100 80 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 60 100 TJ=25 C 8.3ms Single Half 40 Sine Wave JEDEC method 20 10 0 1 5 10 50 100 TJ=75 C 1.0 NUMBER OF CYCLES AT 60Hz TJ=25 C .1 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) REV:A QW-BB032 Page 2 Comchip Technology CO., LTD. 80~100V 50~60V 20~40V AVERAGE FORWARD CURRENT,(A) PEAK FORWARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) REVERSE LEAKAGE CURRENT, (mA)