Low VF SMD Schottky Bridge Rectifiers CDBHD240-G Thru. CDBHD2100-G Reverse Voltage: 40 to 100 Volts Forward Current: 2.0 Amp RoHS Device TO-269AA(MDS) Features - Schottky barrier chips in TO-269AA bridge. 0.165(4.20) - Metal semiconductor junction with guard ring. 0.008(0.20)MAX 0.142(3.60) - Silicon epitaxial planar chips. 0.276(7.00) MAX - Very low forward drop down voltage. 0.031(0.80) 0.043(1.10) 0.020(0.50) 0.028(0.70) - For use in low voltage, high efficiency inverters, free 0.193(4.90) wheeling, and polarity protection applications. 0.177(4.50) 0.106(2.70) 0.091(2.30) Mechanical data 0.106(2.70) 0.091(2.30) - Case: Molded plastic, TO-269AA(MDS) - Epoxy: UL94-V0 rated flame retardant Dimensions in inches and (millimeters) - Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Circuit diagram - Polarity: Marked on body - Mounting Position: Any - Weight: 0.13 grams(approx.). Maximum Ratings and Electrical Characteristics CDBHD CDBHD CDBHD Parameter Conditions Symbol Unit 240-G 260-G 2100-G Repetitive peak reverse VRRM 40 60 100 V voltage Continuous reverse voltage VR 40 60 100 V RMS voltage VRMS 28 42 70 V 8.3ms single half Peak forward surge current sine-wave IFSM 50 A (JEDEC method) Average forward rectified 0.2x0.2(5.0x5.0mm) IAV 2 A current copper pad, See fig.1 Forward voltage IF= 2.0A per element VF 0.50 0.70 0.85 V VR=VRRM, TJ=25C IR 0.5 Reverse current mA VR=VRRM, TJ=100C IR 20 Junction to ambient RJA 75 Typ. thermal resistance C/W Junction to lead RJL 20 Typ. Diode junction f=1MHz and applied 4V CJ 150 PF capacitance DC reverse voltage. Operating junction temperature Range TJ -55 to +125 -55 to +150 C Storage temperature Range TSTG -65 to +175 C Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BL011 Page 1 Comchip Technology CO., LTD.Low VF SMD Schottky Bridge Rectifiers RATING AND CHARACTERISTIC CURVES (CDBHD240-G Thru. CDBHD2100-G) Fig. 2 - Maximum Non-Repetitive Peak Fig.1 - Forward Current Derating Curve Forward Surge Current 100 2.4 CDBHD260-G~CDBHD2100-G 2.0 1.6 CDBHD240-G 10 1.2 0.8 TJ=25C single phase half wave 60Hz 8.3mS single half sine-wave 0.4 resistive or inductive load (JEDEC Method) 3.75(9.5mm) lead length 0 1 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature, ( C) Number of Cycles at 60 Hz Fig. 3 - Typical Instantaneour Forward Fig. 4A - Typical Reverse Characteristics Characteristics 10 100 CDBHD240-G ~ CDBHD260-G pulse width =300 S 1% duty cycle, TJ=25C 10 TJ=150C CDBHD240-G TJ=100C 1.0 1.0 TJ=75C 0.1 CDBHD260-G 0.1 TJ=25C 0.01 CDBHD2100-G 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, ( V ) Percent of Rated Peak Reverse Voltage, ( %) Fig. 4B - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance 1000 10000 CDBHD2100-G 1000 TJ=150C TJ=125C 100 100 TJ=100C 10 1.0 TJ=25C TJ=25C f=1.0MHz 10 0.1 0.1 1.0 10 100 0 20 40 60 80 100 Reverse Voltage, ( V ) Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BL011 Page 2 Comchip Technology CO., LTD. Junction Capacitance, (pF) Instantaneous Forward Current, (A) Average Forward Current, (A) Instantaneous Reverse Current, (A) Instantaneous Reverse Current, (mA) Peak Forward Surge Current, (A)