Low VF SMD Schottky Bridge Rectifiers CDBHM120L-G Thru. CDBHM1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features MBS -High surge forward current capability. 0.140(0.35) 0.006(0.15) -Low Forward voltage drop. 0.043(1.10) - + 0.157(4.00) 0.276(7.00) 0.028(0.70) MAX -General purpose 1 phase Bridge 0.142(3.60) 0.008(0.20) -rectifier applications MAX 0.083(2.12) -UL recognized file E230084 R 0.102(2.60) 0.043(1.10) 0.087(2.20) 0.193(4.90) 0.053(1.53) 0.177(4.50) 0.037(0.95) Mechanical data 0.053(1.53) 0.037(0.95) -Case: molded plastic 0.106(2.70) -Epoxy: UL 94V-0 rate flame retardant. 0.118(3.0) 0.090(2.30) MAX 0.033(0.84) -Lead: solder plated 0.022(0.56) -Polarity: As marked Dimensions in inches and (millimeters) -Weight: 0.125 gram(approx) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load. For capacitive load, derate current by 20% CDBHM-G Symbol Parameter Conditions Units 120L 140L 160L 180L 1100L Max. Repetitive peak reverse voltage VRRM 20 40 60 80 100 V Max. DC blocking voltage VDC 20 40 60 80 100 V Max. RMS voltage VRMS 14 28 42 56 70 V On alumina substrate 1.0 Average rectified output current IO A 60Hz sine wave, R-load, TA=25C On glass-epoxi substrate 0.8 Peak forward surge current,8.3ms single half sine-wave superimposed IFSM 40 A on rated load (JEDEC method) Max. Peak forward voltage VFM IFM=0.5A 0.55 0.65 0.85 V Max. Peak reverse current IRRM VRM=VRRM 0.5 mA 1ms t<8.3ms 2 2 Max. Current Squared Time I t 6.6 A S TA=25C On alumina substrate 76 (1) R JA On glass-epoxi substrate Max. Thermal resistance 134 C/W Between junction and lead R JL 20 Operating temperature range TJ -55 to +150 C Sorage temperature range TSTG -55 to +150 C Notes: 1. Between junction and ambient Company reserves the right to improve product design , functions and reliability without notice. REV: E QW-BL014 Page 1 Comchip Technology CO., LTD.Low VF SMD Schottky Bridge Rectifiers Rating and Characteristics Curves (CDBHM120L-G Thru. CDBHM1100L-G) Fig.1 - Forward Current Derating Curve Fig.2 - Typical Forward Characteristics 1.2 6 CD BH M120 L-G ~ CD BH M140 L-G 1.0 On alumina substrate Sine wave R-load 0.8 1 With Heatsink CDBHM180 L-G ~ 0.6 CDBHM1100 L-G 0.4 On glass-epoxi substrate 0.1 CDBHM160 L-G 0.2 TA=25C 0 0.01 0 25 50 75 100 125 150 175 0.4 0.5 0.6 0.7 0.8 0.9 Case Temperature, (C) Instantaneous Forward Voltage, (V) Fig.3 - Maximum Non-Repetitive Fig.4 - Typical Reverse Characteristics Surge Current 60 100 TJ=25C SINGLE-SINE-WAVE TJ=150C 50 10 40 1 30 TJ=25C 0.1 20 0.01 10 CD BHM120 L-G ~ CD BHM140 L-G CDB HM160 L-G CDBH M180 L-G ~ CDBH M1100 L-G 0 0.001 1 10 100 0 20 40 60 80 100 Number of cycles at 60Hz Percent of Rated Peak Reverse Voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV: E QW-BL014 Page 2 Comchip Technology CO., LTD. Average Forward Output Current, (A) Peak Forward Surge Current, (A) Instantaneous Reverse Current, (mA) Instantaneous Forward Current, (A)