Low Profile SMD Schottky Barrier Rectifiers CDBMT240-HF Thru. CDBMT2200-HF Reverse Voltage: 40 to 200 Volts Forward Current: 2.0 Amp RoHS Device Halogen Free SOD-123H Features -Batch process design, excellent powe 0.146(3.7) dissipation offers better reverse leakage 0.130(3.3) 0.018(0.45) current and thermal resistance. 0.006(0.15) -Low profile surface mounted application in order to optimize board space. 0.071(1.8) -Tiny plastic SMD package. 0.055(1.4) -Low power loss, high efficiency. -High current capability, low forward voltage dorp. 0.006(0.15) 0.002(0.05) -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. 0.040(1.0) 0.024(0.6) -Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.035(0.9) 0.035(0.9) 0.028(0.7) 0.028(0.7) Mechanical data -Epoxy: UL94V0 rated flame retardant. - -Case: Molded plastic, SOD-123H/MINI SMA Dimensions in inches and (millimeter) -Terminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. -Mounting Position: Any -Weight: 0.011 grams approx. Maximum Ratings and Electrical Characteristics (at TA=25C unless otherwise noted) CDBMT CDBMT CDBMT CDBMT CDBMT Parameter Symbol Units 240-HF 260-HF 2100-HF 2150-HF 2200-HF Repetitive peak reverse voltage VRRM 40 60 100 150 200 V RMS voltage VRMS 28 42 70 105 140 V Continuous reverse voltage VR 40 60 100 150 200 V Max. forward voltage VF 0.50 0.70 0.85 0.90 0.92 V IF=2.0A Operating Temperature TJ -55 to +125 -55 to +150 C Symbol Parameter Conditions MIN. TYP. MAX. Units see Fig.1 Forward rectified current IO 2.0 A 8.3ms single half sine-wave superimposed Forward surge current IFSM 50 A on rate load (JEDEC method) VR =VRRM TJ=25C IR 0.5 mA Reverse Current VR =VRRM TJ=100C IR 10 mA Thermal resistance Junction to ambient RJA 85 C/W Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ 160 pF Storage temperature TSTG -65 +175 C Note 1: f=1MHz and applied 4V DC reverse voltage. Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JB026 Page 1 Comchip Technology CO., LTD.CDBMT260-HF~CDBMT2200-HF CDBMT240-HF Low Profile SMD Schottky Barrier Rectifiers Rating and Characteristic Curves (CDBMT240-HF Thru. CDBMT2200-HF) Fig.1 - Typical forward current Fig.2 - Typical forward characteristics derating curve 100 2.4 10 2.0 1.6 1 1.2 0.8 0.1 TJ=25C 0.4 Pulse Width 300US 1% Duty Cycle 0.01 0 20 40 60 80 100 120 140 160 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Forward voltage, (V) Lead Temperature, (C) Fig.3 - Maximum Non-repetitive Fig.4 - Typical Junction Capacitance Forward Surge Current 50 700 O TJ=25 C 8.3ms single half sine wave, JEDEC method 600 40 500 30 400 300 20 200 10 100 0 0 1 10 100 0.01 0.1 1 10 100 Number of cycles at 60Hz Reverse voltage, (V) Fig.5 - Typical reverse characteristics 100 10 1 O TJ=75 C 0.1 O TJ=25 C 0.01 0 40 80 120 160 200 Percent of rated peak reverse voltage, (%) Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JB026 Page 2 Comchip Technology CO., LTD. CDBMT240-HF CDBMT2150-HF~2200-HF CDBMT2100-HF CDBMT260-HF Peak forward surge current, (A) Average forward current, (A) Reverse leakage current, (mA) Junction capacitance, (pF) Instantaneous forward current, (A)