SMD Schottky Barrier Diodes Comchip S M D D i o d e S p e c i a l i s t CDBQC0530L-HF Io = 500mA VR = 30V RoHS Device 0402C/SOD-923F Halogen Free 0.041(1.05) 0.037(0.95) Features 0.026(0.65) - Low forward voltage. 0.022(0.55) - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. 0.022(0.55) 0.018(0.45) Mechanical data 0.001(0.02) Max. 0.026(0.65) - Case: 0402C/SOD-923F standard package, BSC. molded plastic. - Terminals: Gold plated, solderable per 0.022(0.55) MIL-STD-750, method 2026. 0.018(0.45) - Polarity: Color band denotes cathode end. 0.012(0.30) - Mounting position: Any 0.008(0.20) - Weight: 0.001 grams(approx.). Dimensions in inches and (millimeter) Circuit Diagram Maximum Ratings (at TA=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit Reverse stand-off voltage VRRM 30 V DC reverse voltage VR 30 V Mean rectifying current IO 500 mA 8.3ms single half sine-wave Peak forward surge current superimposed on rate load, IFSM 3 A 1cycle (JEDEC method) Thermal resistance Junction to ambient RJA 250 C/W Total power dissipation TA 25C PD 400 mW O Junction temperature range Tj -40 +125 C O Storage temperature range TSTG -40 +125 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ. Parameter Conditions Min. Max. Unit IF = 10mA 0.25 VF Forward voltage IF = 100mA 0.34 V IF = 500mA 0.45 Reverse current VR = 30V, TA=25C IR 90 200 uA Diode capacitance VR = 1V, f=1MHZ CD 36 pF Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G1116 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diodes Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (CDBQC0530L-HF) Fig.2 - Reverse Characteristics Fig.1 - Forward Characteristics 100000 1000 TJ=125C TJ=125C 10000 TJ=100C TJ=100C 100 1000 100 10 TJ=25C TJ=50C 10 TJ=75C 1 1 0 0 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 0.6 Reverse Voltage, (V) Forward Voltage, (V) Fig.4 - Forward Current Derating Curve Fig.3 - Capacitance Characteristics 80 TA=25C f = 1 MHz 100 60 80 40 60 40 20 20 0 0 0 25 50 75 100 125 150 0 10 20 30 Ambient Temperature, (C) Reverse Voltage, (V) Fig.5 - Power Derating Curve 400 300 200 100 0 0 25 50 75 100 125 150 Ambient Temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G1116 Page 2 Comchip Technology CO., LTD. TJ=25C TJ=75C TJ=50C Power Dissipation, (mW) Capacitance Between Terminals, (PF) Forward Current, (mA) Reverse Current, (uA) Average Forward Current, (%)