CDBQR0130R Comchip

SMD Schottky Barrier Diode CDBQR0130R-HF Io = 100 mA VR = 30 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041(1.05) -Low reverse current. 0.037(0.95) -Designed for mounting on small surface. 0.026(0.65) -Extremely thin / leadless package. 0.022(0.55) -Majority carrier conduction. Mechanical data 0.022(0.55) 0.018(0.45) -Case: 0402/SOD-923F standard package, 0.012(0.30) Typ. molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BQ 0.020(0.50) Typ. -Mounting position: Any. Dimensions in inches and (millimeter) -Weight: 0.001 gram(approx.). O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Repetitive peak reverse voltage VRRM 35 V Reverse voltage VR 30 V Average forward current IO 100 mA 8.3ms single half sine-wave superimposed Forward current,surge peak IFSM 1 A on rate load(JEDEC method) Power Dissipation PD 125 mW O Storage temperature TSTG -40 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Forward voltage IF = 10 mA VF 0.45 V Reverse current VR = 10 V IR 0.5 uA REV:C QW-G1099 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR0130R-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 1m O 125 C 100u 100 O 10u 75 C 10 1u O 25 C 100n 1 O -25 C 10n 0.1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 100 f = 1 MHz 100 Ta = 25 C 80 60 10 40 20 0 1 0 5 10 15 20 25 30 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) Fig. 5 - VF Dispersion map Fig. 6 - IR Dispersion map Fig. 7 - CT Dispersion map 50 590 1000 O O O Ta=25 C Ta=25 C Ta=25 C IF=200mA 900 VR=10V 45 F=1MHz n=30pcs n=30pcs VR=0V n=10pcs 580 800 40 700 35 570 600 30 500 25 560 400 20 300 15 AVG:568mV AVG:111nA AVG:18.8pF 550 200 10 100 5 540 0 0 REV:C QW-G1099 Page 2 Comchip Technology CO., LTD. O 125 C O 75 C O 25 C O -25 C Forward voltage (mV) Capacitance between terminals (PF) Forward current (mA ) Reverse current (nA) Average forward current(%) Reverse current ( A ) Capacitance between terminals(pF)