Small Signal Schottky Diodes CDBT-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device Features SOT-23 -Design for mounting on small surface. -High speed switching application, circuit 0.118(3.00) protection. 0.110(2.80) -Low forward voltage drop. 3 0.055(1.40) 0.047(1.20) 1 2 Mechanical data 0.079(2.00) 0.071(1.80) - Case: SOT-23, molded plastic. - Terminals: Solderable per MIL-STD-750, 0.006(0.15) method 2026. 0.003(0.08) 0.045(1.15) 0.035(0.90) - Weight: 0.0078 grams(approx.). 0.100(2.55) 0.089(2.25) Circuit diagram 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) 3 3 3 3 Dimensions in inches and (millimeter) 1 2 1 2 1 2 1 2 CDBT-54-G CDBT-54S-G CDBT-54C-G CDBT-54A-G Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 30 V DC blocking voltage VR Forward continuous current IF 200 mA Non-repetitive peak forward surge current IFsM t=8.3ms 600 mA Power dissipation PD 200 mW Thermal resistance R JA Junction to ambient 500 C/W Junction temperature range TJ 125 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BA002 Page 1 Comchip Technology CO., LTD.Small Signal Schottky Diodes Electrical Characteristics (at Ta=25C unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Reverse voltage IR = 100 A V(BR) 30 V IF = 0.1mA 0.24 IF = 1mA 0.32 FForward voltage IF = 10mA 0.40 V VF IF = 30mA 0.50 IF = 100mA 1.00 VR = 25V A Reverse current IR 2 Diode capacitance VR = 1V, f = 1.0MHz pF CJ 10 IF = IR = 10mA, Reverse recovery time Trr 5 nS IRR = 0.1XIR, RL = 100 RATING AND CHARACTERISTIC CURVES (CDBT-54/S/C/A-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 200 300 100 100 TA=100C O TA=100 C 10 TA=25C 10 1 1 0.1 0.1 O TA=25 C 0.01 0.01 0 200 400 600 800 1000 0 5 10 15 20 25 30 Reverse Voltage, VR (V) Forward Voltage, VF (mV) Fig.3 - Capacitance Characteristics Fig.4 - Power Derating Curve 240 20 TJ=25C Mounted on glass epoxy PCBs f=1MHz 200 16 160 12 120 8 80 4 40 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 Reverse Voltage, VR (V) Ambient Temperature, TA (C) Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BA002 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, CT (pF) Forward Current, IF (mA) Reverse Current, IR (uA) Pow er Dissipation, PD (m W)