CDBUR0140L Comchip

SMD Schottky Barrier Diode CDBUR0140L-HF Io = 100 mA VR = 40 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071(1.80) 0.063(1.60) -Low forward voltage. -Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data 0.033(0.85) 0.027(0.70) -Case: 0603/SOD-523F standard package, molded plastic. 0.018(0.45) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & B8 0.028(0.70) Typ. -Mounting position: Any -Weight: 0.003 gram(approx.). Dimensions in inches and (millimeter) O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Repetitive Peak reverse voltage VRRM 45 V Reverse voltage VR 40 V Average forward rectified current IO 100 mA 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 1 A on rate load (JEDEC method) O Storage temperature TSTG -40 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ Parameter Symbol Max Unit Conditions Min IF = 100mA 0.55 Forward voltage VF V IF = 10mA 0.34 Reverse current VR = 10V IR 30 uA Capacitance between terminals f = 1 MHz, and 10 VDC reverse voltage pF CT 6 REV:A QW-G1033 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBUR0140L-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 10m 1m O 75 C 100u 100 O 10u 25 C 1u 10 100n O -25 C 10n 1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 15 100 12 80 9 60 6 40 3 20 0 0 0 10 20 30 40 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1033 Page 2 Comchip Technology CO., LTD. O 125 C O 75 C O 25 C O -25 C Capacitance between terminals (PF) Forward current (mA ) Average forward current(%) Reverse current ( A )