SMD Schottky Barrier Diodes CDBW0520L-HF Thru. CDBW0540-HF Reverse Voltage: 20 to 40 Volts Forward Current: 0.5 Amp RoHS Device Halogen Free SOD-123 Features 0.110(2.80) -Low turn on voltage. 0.098(2.50) -Fast switching. -PN junction guard ring for transient and ESD 0.071(1.80) 0.028(0.70) 0.019(0.50) 0.055(1.40) protection. 0.154(3.90) Mechanical data 0.141(3.60) -Case: SOD-123, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. 0.053(1.35) 0.008(0.20) 0.037(0.95) Max. -Polarity: Color band denotes cathode end. 0.005(0.12) 0.016(0.40) Max. Min. -Weight: 0.0097 gram(approx.). Marking Circuit Diagram CDBW0520L-G: SD Dimensions in inches and (millimeter) CDBW0530-G: SE CDBW0540-G: SF Maximum Ratings and Electrical Characteristics (At Ta=25C, unless otherwise noted) Parameter Symbol CDBW0520L-HF CDBW0530-HF CDBW0540-HF Units Max. repetitive peak reverse voltage VRRM 20 30 40 V 30 Max. DC blocking voltage VDC 20 40 V Max. RMS voltage VRMS 14 21 28 V Peak surge forward current, 8.3ms single half sine-wave superimposed IFSM 5.5 A on rate load (JEDEC method) IO 0.5 A Max. average forward current 0.3 IF=0.1A 0.375 IF=0.1A 0.51 IF=0.5A Max. forward voltage VF V 0.385 IF=0.5A 0.430 IF=0.5A 0.62 IF=1.0A 0.075 VR=10V 0.01 VR=20V 0.02 VR=15V IR Max. reverse current mA 0.25 VR=20V 0.02 VR=40V 0.13 VR=30V R JA 206 Max. thermal resistance (Note 1) C/W R JL 150 Max. operating junction temperature TJ C 125 Storage temperature TSTG -55 to +125 C Notes: 1. Thermal resistance from junction to ambient and junction to lead, mounted on P.C.B. with 0.20.2 inch copper pad area. 2 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB010 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (CDBW0520L-HF thru CDBW0540-HF) Fig.1 Forward Characteristics Fig.2 Current Derating Curve 10 1.2 Mounted on glass CDBW0540-HF epoxy PCB 1.0 0.8 1 CDBW0520L-HF 0.6 0.4 0.1 CDBW0530-HF 0.2 0.01 0 0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 Forward voltage (V) Lead Temperature (C) Fig.3 Total Capacitance vs. Reverse voltage 1000 f=1.0MHz 100 10 1 0.1 0 5 10 15 20 25 Reverse Voltage (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB010 Page 2 Comchip Technology CO., LTD. Tota lC apacitance (pF) ForwardC urrent (A) Average Rec tifi ed Curren t(A )