SMD Schottky Barrier Diodes CDBW120-G Thru. CDBW140-G Forward current: 1.0A Reverse voltage: 20 to 40V RoHS Device Features SOD-123 -For use in low voltage, high frequency inverters. -Free wheeling, and polarity protection applications. 0.152(3.85) 0.140(3.55) Mechanical Data 0.026(0.65) 0.067(1.70) -Case: SOD-123, molded plastic. 0.059(1.50) 0.018(0.45) -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: indicated by cathode end. 0.110(2.80) 0.102(2.60) -Weight: 0.0097 gram(approx.). Marking 0.049(1.25) 0.006 (0.15) 0.041(1.05) 0.003 (0.08) CDBW120-G: SJ 0.004(0.10) Max. CDBW130-G: SK 0.020 (0.50) REF CDBW140-G: SL Dimensions in inches and (millimeter) Circuit Diagram Maximum Ratings (At Ta=25C, unless otherwise noted) Symbol Parameter CDBW120-G CDBW130-G CDBW140-G Unit Non-repetitive peak reverse voltage VRM 20 30 40 V Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 20 30 40 V VR DC blocking voltage RMS reverse voltage VR(RMS) 14 21 28 V Average rectified output current IO 1 A Peak forward surge current 8.3ms IFSM 9 A Repetitive peak forward current IFRM 1.5 A Power dissipation PD 500 mW Thermal resistance, junction to ambient RJA 250 C/W Junction temperature TJ -55 ~ +125 C Storage temperature TSTG -55 ~ +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BB020 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diodes Electrical Characteristics (At Ta=25C, unless otherwise noted) Symbol Min. Max. Parameter Conditions Unit CDBW120-G 20 Reverse breakdown voltage 30 CDBW130-G IR=1mA VBR V CDBW140-G 40 CDBW120-G VR=20V Reverse voltage leakage current CDBW130-G VR=30V IR 1 mA CDBW140-G VR=40V CDBW120-G 0.45 CDBW130-G IF=1A 0.55 CDBW140-G 0.60 Forward voltage VF V CDBW120-G 0.75 CDBW130-G IF=3A 0.875 CDBW140-G 0.90 Diode capacitance VR=4V, f=1MHz CD 120 pF Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BB020 Page 2 Comchip Technology CO., LTD.