Small Signal Schottky Diodes Comchip S M D D i o d e S p e c i a l i s t CDBW46-G + Reverse Voltage: 100 Volts Forward Current: 150 mA - RoHS Device SOD-123 0.152(3.85) Features 0.140(3.55) - Design for mounting on small surface. - + 0.026(0.65) 0.067(1.70) - High breakdown voltage. 0.018(0.45) 0.059(1.50) - Low trun-on voltage. 0.110(2.80) - Guard ring construction for transient protection. 0.102(2.60) Mechanical data 0.049(1.25) 0.006(0.15) 0.041(1.05) - Case: SOD-123, Molded Plastic Max. - Terminals: Solderable per MIL-STD-202, Method 208 0.004(0.10) 0.02(0.50) REF Max. - Approx. Weight: 0.04 gram Dimensions in inches and (millimeters) Circuit diagram 1 2 Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Conditions Limits Unit Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 100 V DC blocking voltage VR Forward continuous current IF 150 mA Repetitive Peak Forward current (Note 1) tp<1.0s, Duty Cycle<50% IFRM 350 mA Forward surge Forward current (Note 1) tp<10ms IFSM 750 mA Power dissipation PD 200 mW Thermal Resistance Junction to ambient air RJA 625 C/W Junction temperature Tj -55 to +150 C Storage temperature TSTG -55 to +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Typ Symbol Parameter Conditions Min Max Unit Reverse breakdown voltage (Note 2) IR=100A VR 100 V IF1 = 0.1 mA 0.25 Forward voltage (Note 2) I F2 = 10mA VF 0.45 V I F3 = 250mA 1.0 VR1 = 1.5V 0.3 VR2 = 10V 0.5 Reverse Voltage Leakage current A IR VR3 = 50V 1 VR4 = 75V 2 VR=0V, f = 1 MHZ 20 Diode capacitance CT PF VR=1V, f = 1 MHZ 12 Notes: 1.Part mounted on FR-4 board with recommended pad layout. 2.Short duration pulse test used to minimize self-heating effect. Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BA018 Page 1 Comchip Technology CO., LTD.Small Signal Schottky Diodes Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (CDBW46-G) Fig.1 - Typical Forward Characteristics Fig.2 - Typical Reverse characteristics 10,000 1,000 O TA=125 C 1,000 100 O O TA=125 C TA=85 C 100 10 10 1.0 O TA=60 C O TA=85 C 1.0 0.1 O O TA=60 C TA=25 C 0.1 0.01 O TA=25 C 0.01 O 0.001 TA=-55 C O TA=-55 C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 VF, Instantaneous Forward Voltage, (V) VR, Instantaneous Reverse voltage, (V) Fig.3 - Total Capacitance vs. Fig.4 - Forward Current Derating Reverse Voltage 210 25 Note 1 f = 1 MHz 180 20 150 15 120 90 10 60 5 30 1 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 VR, DC Reverse Voltage, (V) TA, Ambient temperature, (C) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BA018 Page 2 Comchip Technology CO., LTD. IF, Instantaneous Forward Current, (mA) CT, Total Capacitance , (PF) IF(AVE), Average forward current,(mA) IR, Instantaneous Reverse Current,(A)
