Low Profile SMD Fast Recovery Rectifiers SMD Diodes Specialist CFRMT101-HF Thru. CFRMT107-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123H Features 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. -Excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile package is 40% thinner than standards 0.071(1.8) SOD-123. 0.055(1.4) -Tiny plastic SMD package. -High current capability. -Fast switching for high efficiency. -High surge current capability. -Glass passivated chip junction. -Lead-free parts meet RoHS requirments. 0.040(1.0) 0.024(0.6) Mechanical data -Epoxy: UL94-V0 rated flame retardant. 0.031(0.8) Typ. 0.031(0.8) Typ. -Case: Molded plastic, SOD-123H/MINI SMA -Terminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. Dimensions in inches and (millimeter) -Mounting Position: any -Weight: 0.011 grams approx. Maximum Ratings (at TA=25C unless otherwise noted) CFRMT CFRMT CFRMT CFRMT CFRMT CFRMT CFRMT Parameter Symbol Unit 101-HF 102-HF 103-HF 104-HF 105-HF 106-F 107-HF Max. Repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. Continuous reverse voltage VR 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Max. Forward rectified current IO 1.0 A Ambient temperature=55C Max. Forward voltage VF 1.3 V IF=1.0A Max. Reverse recovery time (note 1) 150 250 500 ns TRR Max. Forward surge current 8.3ms singe half sine-wave superimposed IFSM 25 A on rated load (JEDEC method) VR=VRRM TJ=25C 5.0 A Max. Reverse current IR VR=VRRM TJ=100C 100 Typ. Thermal resistance R JA 42 C/W Junction to ambient air Typ. Diode Junction capacitance CJ 15 pF f=1MHz and applied 4V DC reverse voltage Operating junction temperature TJ -55 to +150 C Storage temperature range TSTG -65 to +175 C Note 1. Reverse recovery time test condition,IF=0.5A,IR=1.0A,IRR=0.25A REV: A QW-JF002 Page 1 Comchip Technology CO., LTD.Low Profile SMD Fast Recovery Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CFRMT101-HF Thru. CFRMT107-HF) Fig.1- Typical Forward Current Fig.2- Typical Forward Characteristics Derating Curve 1.4 100 Single phase, half wave, 60Hz, resistive or inductive load 1.2 10 1.0 0.8 1.0 0.6 O TJ=25 C 0.4 Pulse width=300 s 0.1 1% duty cycle 0.2 0.01 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 VF, Forward Voltage (V) TA, Ambient Temperature (C) Fig.3- Test Circuit Diagram and Reverse Fig.4- Maximum Non-repetitive Recovery Time Characteristics Forward Surge Current 50 O 50 W 10W TJ=25 C NONINDUCTIVE NONINDUCTIVE 8.3ms single half sine wave, JEDEC method 40 ( ) (+) D.U.T. 25Vdc PULSE 30 GENERATOR (approx.) (NOTE 2) ( ) (+) 1 W OSCILLISCOPE NON- (NOTE 1) 20 INDUCTIVE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 10 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 0 trr 1 10 100 +0.5A Number of Cycles at 60Hz 0 Fig.5- Typical Junction Capacitance -0.25A 35 30 -1.0A 1cm 25 SET TIME BASE FOR 50 / 10ns / cm 20 15 10 5 0 0.01 0.1 1 10 100 VR, Reverse Voltage, (V) REV: A QW-JF002 Page 2 Comchip Technology CO., LTD. IO, Average Forward Current, (A) IFSM, Peak Forward Surge Current, (A) CJ, Junction Capacitance, (pF) F,Instantaneous Forward Current, (A)