Low Profile SMD General Purpose Rectifiers SMD Diodes Specialist CGRMT4001-HF Thru. CGRMT4007-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123H 0.146(3.7) Features 0.130(3.3) 0.012(0.3) Typ. -Excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile package is 40% thinner than standards 0.071(1.8) SOD-123 . 0.055(1.4) -Tiny plastic SMD package. -High current capability. -High surge capability. -Glass passivated chip junction. -Lead-free parts meet environmental standards of MIL-STD-19500/228 0.040(1.0) 0.024(0.6) Mechanical data 0.031(0.8) Typ. 0.031(0.8) Typ. -Epoxy: UL94-V0 rated flame retardant. -Case: Molded plastic, SOD-123H/MINI SMA -Terminals: Solderable per MIL-STD-750, Method 2026. Dimensions in inches and (millimeter) -Polarity: Indicated by cathode band. -Mounting Position: any -Weight: 0.011 grams approx. Maximum Ratings (at TA=25C unless otherwise noted) CGRMT CGRMT CGRMT CGRMT CGRMT CGRMT CGRMT Parameter Symbol Unit 4001-HF 4002-HF 4003-HF 4004-HF 4005-HF 4006-HF 4007-HF Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. Continuous reverse voltage VR 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Max. averaged forward current IO 1.0 A Max. Forward voltage VF 1.1 V IF=1.0A Max. Forward surge current 8.3ms singe half sine-wave superimposed IFSM 25 A on rated load (JEDEC method) VR=VRRM TJ=25C 5.0 A Max. Reverse current IR VR=VRRM TJ=100C 50 Typ. Thermal resistance, junction to R JA 60 C/W ambient air Typ. Junction capacitance 15 pF CJ f=1MHz and applied 4V DC reverse voltage Operating junction temperature TJ -55 to +150 C Storage temperature range TSTG -65 to +175 C REV: A QW-JG003 Page 1 Comchip Technology CO., LTD.Low Profile SMD General Purpose Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CGRMT4001-HF Thru. CGRMT4007-HF) Fig.1- Typical Forward Current Fig.1- Typical Forward Characteristics Derating Curve 1.4 100 Single phase, half wave, 60Hz, resistive or inductive load 1.2 10 1.0 0.8 1.0 0.6 O TJ=25 C Pulse width=300 s 1% duty cycle 0.4 0.1 0.2 0 0.01 20 40 60 80 100 120 140 160 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 TA, Ambient Temperature (C) VF, Forward Voltage (V) Fig.3- Typical Reverse Characteristics Fig.4- Typical Junction Capacitance Forward Surge Current 50 35 f=1MHz O TJ=25 C Applied 4VDC 8.3ms single half sine reverse voltage 30 wave, JEDEC method 40 25 30 20 15 20 10 10 5 0 0 1 10 100 0.01 0.1 1 10 100 Number of Cycles at 60Hz VR, Reverse Voltage, (V) Fig.5- Maximum Non-repetitive 100 10 O TJ=100 C 1.0 0.1 O TJ=25 C 0.01 0 40 80 120 160 200 Percentage Rated Peak Reverse Voltage, (%) REV:A QW-JG003 Page 2 Comchip Technology CO., LTD. IR, Reverse Current, (A) IO, Average Forward Current, (A) IFSM, Peak Forward Surge Current, (A) CJ, Junction Capacitance, (pF) F,Instantaneous Forward Current, (A)