SMD Super Fast Recovery Rectifiers CSFB201-G Thru. CSFB205-G Reverse Voltage: 50 to 600 Volts Forward Current: 2.0 Amp RoHS Device DO-214AA (SMB) Features -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.083(2.11) 0.155(3.94) 0.075(1.91) 0.130(3.30) -Super fast recovery time 35nS. -Built-in strain relief. -Low forward voltage drop. 0.220(5.59) 0.200(5.08) 0.012(0.31) 0.006(0.15) Mechanical data 0.096(2.44) 0.083(2.13) -Case: JEDEC DO-214AA, molded plastic. 0.008(0.20) 0.050(1.27) -Terminals: solderable per MIL-STD-750, 0.004(0.10) 0.030(0.76) method 2026. -Polarity: Color band denotes cathode end. Dimensions in inches and (millimeter) -Approx. weight: 0.093 grams Maximum Ratings and Electrical Characteristics Parameter Symbol CSFB201-G CSFB202-G CSFB203-G CSFB204-G CSFB205-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 V Max. DC blocking voltage VDC 50 100 200 400 600 V Max. RMS voltage VRMS 35 70 140 280 420 V Peak surge forward current, 8.3ms single half sine-wave superimposed IFSM 50 A on rate load (JEDEC method) IO 2.0 A Max. average forward current Max. instantaneous forward voltage at VF 0.95 1.25 1.70 V 2.0A Trr 35 nS Reverse recovery time 5.0 Max. DC reverse current at TA=25 C IR A 350 rated DC blocking voltage TA=125C R JL 20 Max. thermal resistance (Note 1) C/W Max. operating junction temperature TJ 150 C Storage temperature TSTG -55 to +150 C Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.08.0 mm copper pad area. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BS002 Page 1 Comchip Technology CO., LTD.SMD Super Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CSFB201-G thru CSFB205-G) Fig.1- Reverse characteristics Fig.2- Forward characteristics 1000 100 CSFB201-G~CSFB203-G O TJ=125 C 100 10 CSFB204-G 10 1 O TJ=75 C CSFB205-G O TJ=25 C 1 0.1 O TJ=25 C Pulse width 300 S 4% duty cycle 0.1 0.01 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage, (V) Percent of rated peak reverse voltage, (%) Fig.3- Junction capacitance Fig.4- Non-repetitive forward surge current 50 60 O TJ=25 C 8.3ms single half sine 50 wave, JEDEC method 40 40 30 30 20 20 10 O TJ=25 C 10 f=1MHz Vsig=50mVp-p 0 0 1 10 100 0.1 1 10 100 1000 Number of cycles at 60Hz Reverse voltage, (V) Fig.5- Test circuit diagram and reverse recovery time characteristics Fig.6- Current derating curve 2.8 trr 50 10 NONINDUCTIVE NONINDUCTIVE +0.5A 2.4 2.0 (-) (+) 0 D.U.T. 25Vdc PULSE 1.6 (approx.) GENERATOR (-) (NOTE 2) -0.25A 1.2 (+) 1 OSCILLLISCOPE NON- (NOTE 1) Single phase 0.8 INDUCTIVE Half wave 60Hz 0.4 NOTES: 1. Rise time=7ns max., input impedance=1 M , 22pF. -1.0A 1cm 2. Rise time=10ns max., input impedance=50 . 0 Set time base for 0 25 50 75 100 125 150 175 50 / 10nS / cm Ambient temperature, ( C ) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BS002 Page 2 Comchip Technology CO., LTD. Reverse current, (A) Junction capacitance, (pF) Peak forward surge current, (A) Forward current, (A) Average forward current, (A)