SMD Super Fast Recovery Rectifiers CSFM103-G Thru. CSFM105-G Reverse Voltage: 200 to 600 Volts Forward Current: 1.0 Amp RoHS Device Features Mini SMA / SOD-123 -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 0.154(3.90) 0.138(3.50) -Tiny plastic SMD package. 0.012(0.30) Typ. -Super fast recovery time for switching mode application. -High current capability. 0.075(1.9) 0.059(1.5) -High surge current capability. -Glass passivated chip junction. Mechanical data -Epoxy: UL 94-V0 rated flame retardant. 0.067(1.7) -Case: Molded plastic, JEDEC SOD-123/Mini SMA. 0.051(1.3) -Terminals: Solderable per MIL-STD-750, method 0.028(0.7) Typ. 0.028(0.70) Typ. 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight: 0.018 grams approx. Dimensions in inches and (millimeter) Maximum Ratings (at TA=25C unless otherwise noted) CSFM CSFM CSFM Symbol Parameter Conditions Unit 103-G 104-G 105-G Repetitive peak reverse voltage VRRM 200 400 600 V Continuous reverse voltage VDC 200 400 600 V RMS voltage VRMS 140 280 420 V Max. forward rectified current Ambient temperature=50C IO 1.0 A Maximum Instantaneous forward VF 0.95 1.25 1.70 V voltage at IF=1.0A 8.3ms single half sine-wave Max. Forward surge current superimposed on rated IFSM 25 A load (JEDEC method) IF=0.5A , IR=1.0A Max. Reverse recovery time Trr 35 nS IRR=0.25A VR=VRRM TJ= 25C 5.0 A Max.Reverse current IR VR=VRRM TJ= 125C 100 Typ. Thermal resistance Junction to ambient RJA 42 C/W f=1MHZ and applied 4V DC Diode junction capacitance CJ 10 pF reverse voltage Operating junction temperature TJ -55 to +150 C Storage temperature range TSTG -65 to +175 C Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BS005 Page 1 Comchip Technology CO., LTD.SMD Super Fast Recovery Rectifiers Rating and Characteristic Curves (CSFM103-G Thru. CSFM105-G) Fig.1 - Typical Forward Characteristics Fig.2 - Typical Forward Current Derating Curve 1.4 10 1.2 1 1.0 0.8 0.1 0.6 0.4 0.01 O TJ=25 C Pulse width 300S 0.2 1% duty cycle 0 0.001 20 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ambient Temperature, (C) Forward Voltage, (V) Fig.3 - Test Circuit Diagram and Reverse Recovery Fig.4 - Non-repetitive Forward Surge Current Recovery Time Characteristics 50W 50 10W O NONINDUCTIVE TJ=25 C NONINDUCTIVE 8.3ms single half sine wave, JEDEC method 40 (+) ( ) D.U.T. 25Vdc PULSE (approx.) GENERATOR (NOTE 2) 30 ( ) (+) 1W OSCILLISCOPE NON- (NOTE 1) INDUCTIVE 20 NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 10 0 1 10 100 trr Number of Cycles at 60Hz +0.5A Fig.5 - Typical Junction Capacitance 0 -0.25A 70 60 50 -1.0A 1cm 40 SET TIME BASE FOR 50 / 10ns / cm 30 20 10 0 0.01 0.1 1 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:D QW-BS005 Page 2 Comchip Technology CO., LTD. CSFM104-G CSFM105-G CSFM103-G Instantaneous Forward Current, (A) Junction Capacitance, (pF) Peak Forward Surge Current, (A) Average Forward Current, (A)
