CSFMT106-HF Comchip

Low Profile SMD Super Fast Recovery Rectifiers CSFMT104-HF Thru. CSFMT108-HF Reverse Voltage: 200 to 600 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123H Features -Excellent power dissipation of fers better reverse 0.146(3.7) leakage current and thermal resistance. 0.130(3.3) 0.018(0.45) -Low profile surface mounted application in order 0.006(0.15) to optimize board space. -Tiny plastic SMD package. 0.071(1.8) 0.055(1.4) -High current capability. -Super fast reovery time for switching mode application. 0.006(0.15) -High surge current capability. 0.002(0.05) -Glass passivated chip junction. Mechanical data 0.040(1.0) 0.024(0.6) -Epoxy: UL94V-0 rated flame retardant. 0.035(0.9) 0.035(0.9) -Case: Molded plastic, SOD-123H/MINI SMA 0.028(0.7) 0.028(0.7) -Terminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. -Mounting Position: any Dimensions in inches and (millimeter) -Weight: 0.011 grams approx. Maximum Ratings and Electrical Characteristics (at TA=25C unless otherwise noted) CSFMT CSFMT CSFMT Symbol Parameter Unit 104-HF 106-HF 108-HF Max. repetitive peak reverse voltage VRRM 200 400 600 V Max. Continuous rever voltage VR 200 400 600 V Max. RMS voltage VRMS 140 280 420 V Max. Forward rectified current IO 1.0 A Max. Forward voltage VF 0.95 1.25 1.70 V IF=1.0A Reverse recovery time (Note 1) ns TRR 35 Max. Forward surge current 8.3ms singe half sine-wave superimposed IFSM 25 A on rated load (JEDEC method) VR=VRRM TJ=25C 5.0 Max. Reverse current IR A VR=VRRM TJ=125C 100 Typ. Thermal resistance RJA 42 C/W Junction to ambient air Typ. Junction capacitance pF CJ 10 f=1MHz and applied 4V DC reverse voltage Operating junction temperature TJ -55 to +150 C Storage temperature TSTG -65 to +175 C Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JS002 Page 1 Comchip Technology CO., LTD.Low Profile SMD Super Fast Recovery Rectifiers Rating and Characteristic Curves (CSFMT104-HF Thru. CSFMT108-HF) Fig.2 - Typical Forward Characteristics Fig.1 - Typical Forward Current Derating Curve 10 1.4 P.C.B. Mounted on 0.2 * 0.2(5mm*5mm) Copper Pad Areas 1.2 1.0 1.0 0.8 0.1 0.6 TJ=25C 0.4 Pulse width=300s 0.01 1% duty cycle 0.2 0.001 0 1.8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Forward Voltage (V) Lead Temperature, (C) Fig.3- Test Circuit Diagram and Reverse Fig.4 - Maximum Non-repetitive Recovery Time Characteristics Forward Surge Current 50 50W 10W TJ=25C NONINDUCTIVE NONINDUCTIVE 8.3ms single half sine wave, JEDEC method 40 (+) ( ) D.U.T. 25Vdc PULSE 30 GENERATOR (approx.) (NOTE 2) ( ) (+) 1W OSCILLISCOPE NON- (NOTE 1) 20 INDUCTIVE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 10 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 0 trr 1 10 100 +0.5A Number of Cycles at 60Hz 0 Fig.5 - Typical Junction Capacitance -0.25A 70 60 -1.0A 1cm 50 SET TIME BASE FOR 50 / 10ns / cm 40 30 20 10 0 0.01 0.1 1 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JS002 Page 2 Comchip Technology CO., LTD. CSFMT108-HF CSFMT106-HF CSFMT104-HF Average Forward Current, (A) Peak Forward Surge Current, (A) Junction Capacitance, (pF) Instantaneous Forward Current, (A)