SMD Ultra Fast Recovery Rectifiers CURA101-G Thru. CURA107-G Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.067(1.70) 0.110(2.79) 0.051(1.29) 0.086(2.18) -Ultra fast recovery time: 50~75nS. -Low leakage current. 0.209(5.31) Mechanical data 0.185(4.70) 0.012(0.31) 0.006(0.15) -Case: JEDEC DO-214AC, molded plastic. 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, 0.008(0.20) 0.059(1.50) method 2026. 0.004(0.10) 0.035(0.89) -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics CURA CURA CURA CURA CURA CURA CURA Parameter Symbol Units 101-G 102-G 103-G 104-G 105-G 106-G 107-G Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed IFSM 30 A on rate load (JEDEC method) IO 1.0 A Max. average forward current Max. instantaneous forward voltage at VF 1.0 1.3 1.7 V 1.0A Trr 50 75 nS Reverse recovery time O Max. DC reverse current at TA=25 C 5.0 IR A O rated DC blocking voltage TA=100 C 100 O R JL 42 Max. thermal resistance (Note 1) C/W O Max. operating junction temperature TJ 150 C O Storage temperature TSTG -55 to +150 C Notes: 1. Thermal resistance from junction to lead. REV:A QW-BU001 Page 1 Comchip Technology CO., LTD.SMD Ultra Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CURA101-G thru CURA107-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 100 O 100 TJ=125 C 10 10 1 O 1 0.1 TJ=25 C O TJ=25 C Pulse width 300 S 4% duty cycle 0.1 0.01 0.4 0.8 1.2 1.6 2.0 2.4 0 20 40 60 80 100 120 140 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 140 30 O O TJ=25 C TJ=25 C 8.3ms single half sine f=1MHz and applied wave, JEDEC method 120 4VDC reverse voltage 24 100 18 80 60 12 40 6 20 0 0 0.01 0.1 1 10 100 1 10 100 Reverse Voltage (V) Number of Cycles at 60Hz Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 1.4 trr 50 10 1.2 NONINDUCTIVE NONINDUCTIVE +0.5A 1.0 (-) 0.8 (+) 0 D.U.T. 25Vdc PULSE (approx.) GENERATOR 0.6 (-) -0.25A (NOTE 2) (+) Single phase 1 0.4 OSCILLLISCOPE Half wave 60Hz NON- (NOTE 1) INDUCTIVE 0.2 NOTES: 1. Rise time=7ns max., input impedance=1 M , 22pF. -1.0A 0 0 25 50 75 100 125 150 175 1cm 2. Rise time=10ns max., input impedance=50 . O Set time base for Ambient Temperature ( C) 50 / 10nS / cm REV:A QW-BU001 Page 2 Comchip Technology CO., LTD. CURA105- G~107- G CURA104 -G CURA10 1-G~103-G Rever se Current (A) Junction Capaciatn ce( p F) Peak F orward Surge C urrent A( ) Forward Curren t(A) Average Forward Current (A)