SMD Ultra Fast Recovery Rectifiers CURB201-G Thru. CURB207-G Reverse Voltage: 50 to 1000 Volts Forward Current: 2.0 Amp RoHS Device Features DO-214AA (SMB) -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.083(2.11) 0.155(3.94) 0.075(1.91) 0.130(3.30) -Fast recovery time: 50~75nS. -Low leakage current. 0.220(5.59) Mechanical data 0.200(5.08) 0.012(0.31) 0.006(0.15) -Case: JEDEC DO-214AA, molded plastic. 0.096(2.44) 0.083(2.13) -Terminals: solderable per MIL-STD-750, 0.008(0.20) 0.050(1.27) method 2026. 0.004(0.10) 0.030(0.76) -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics CURB CURB CURB CURB CURB CURB CURB Parameter Symbol Units 201-G 202-G 203-G 204-G 205-G 206-G 207-G Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed IFSM 50 A on rate load (JEDEC method) IO 2.0 A Max. average forward current Max. instantaneous forward voltage at VF 1.0 1.3 1.7 V 2.0A Trr 50 75 nS Reverse recovery time O Max. DC reverse current at TA=25 C 5.0 IR A O rated DC blocking voltage TA=125 C 100 O R JL 20 Max. thermal resistance (Note 1) C/W O Max. operating junction temperature TJ 150 C O Storage temperature TSTG -55 to +150 C 2 Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.08.0 mm square (0.13mm thick) land area. REV:A QW-BU003 Page 1 Comchip Technology CO., LTD.SMD Ultra Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CURB201-G thru CURB207-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 10 CURB201-G~203-G O TJ=125 C 100 1 CURB204-G 10 0.1 CURB205-G~207-G O TJ=25 C 1 0.01 O TJ=25 C Pulse width 300 S 4% duty cycle 0.1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 200 60 O TJ=25 C O f=1MHz TJ=25 C 100 8.3ms single half sine Vsig=50mVp-p 50 wave, JEDEC method 40 30 10 20 10 1 0 0.1 1 10 100 1 10 100 Reverse Voltage (V) Number of Cycles at 60Hz Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 trr 50 10 2.4 NONINDUCTIVE NONINDUCTIVE +0.5A 2.0 (-) 1.6 (+) 0 D.U.T. 25Vdc PULSE (approx.) GENERATOR 1.2 (-) -0.25A (NOTE 2) (+) Single phase 1 0.8 OSCILLLISCOPE Half wave 60Hz NON- (NOTE 1) INDUCTIVE 0.4 NOTES: 1. Rise time=7ns max., input impedance=1 M , 22pF. -1.0A 0 0 25 50 75 100 125 150 175 1cm 2. Rise time=10ns max., input impedance=50 . O Set time base for Ambient Temperature ( C) 50 / 10nS / cm REV:A QW-BU003 Page 2 Comchip Technology CO., LTD. Rever se Current (A) Junction Capaciatn ce( p F) Peak F orward Surge C urrent A( ) Forward Curren t(A) Average Forward Current (A)