SMD Ultra Fast Recovery Rectifiers CURC301-G Thru. CURC307-G Reverse Voltage: 50 to 1000 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AB (SMC) -Ideal for surface mount applications. -Easy pick and place. 0.280(7.11) 0.260(6.60) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.245(6.22) 0.126(3.20) 0.114(2.90) 0.220(5.59) -Fast recovery time: 50~75nS. -Low leakage current. 0.320(8.13) Mechanical data 0.305(7.75) 0.012(0.305) 0.006(0.152) -Case: JEDEC DO-214AB, molded plastic. 0.103(2.62) 0.079(2.06) -Terminals: solderable per MIL-STD-750, 0.008(0.203)Max 0.060(1.52) method 2026. 0.030(0.76) -Polarity: Color band denotes cathode end. -Approx. weight: 0.21 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics CURC CURC CURC CURC CURC CURC CURC Parameter Symbol Units 301-G 302-G 303-G 304-G 305-G 306-G 307-G Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed IFSM 100 A on rate load (JEDEC method) Max. average forward current IO 3.0 A Max. instantaneous forward voltage VF 1.0 1.3 1.7 V at 3.0A Trr 50 75 nS Reverse recovery time Max. DC reverse current at TA=25C 5.0 IR A rated DC blocking voltage TA=125C 150 O Max. thermal resistance (Note 1) R JL 20 C/W O TJ Max. operating junction temperature 150 C O TSTG Storage temperature -55 to +150 C Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.08.0 mm square land area. 2 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BU004 Page 1 Comchip Technology CO., LTD.SMD Ultra Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CURC301-G thru CURC307-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 100 CURC301-G~303-G O TJ=125 C 100 10 CURC304-G 10 1 CURC305-G~307-G O TJ=25 C 0.1 1 O TJ=25 C Pulse width 300 S 4% duty cycle 0.1 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 200 100 O TJ=25 C 100 8.3ms single half sine 80 wave, JEDEC method 60 10 40 O 20 TJ=25 C f=1MHz Vsig=50mVp-p 1 0 0.1 1 10 100 1 10 100 Reverse Voltage (V) Number of Cycles at 60Hz Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 3.5 trr 50 10 3.0 NONINDUCTIVE NONINDUCTIVE +0.5A 2.5 (-) 2.0 (+) 0 D.U.T. 25Vdc PULSE (approx.) GENERATOR 1.5 (-) (NOTE 2) -0.25A (+) Single phase 1 1.0 OSCILLLISCOPE Half wave 60Hz NON- (NOTE 1) INDUCTIVE 0.5 NOTES: 1. Rise time=7ns max., input impedance=1 M , 22pF. -1.0A 0 0 25 50 75 100 125 150 175 1cm 2. Rise time=10ns max., input impedance=50 . O Set time base for Ambient Temperature ( C) 50 / 10nS / cm Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BU004 Page 2 Comchip Technology CO., LTD. Junction Capaciatn ce( p F) Rever se Current (A) Peak F orward Surge C urrent A( ) Forward Curren t(A) Average Forward Current (A)