SMD Ultra Fast Recovery Rectifiers CURM103-G Thru. CURM107-G Reverse Voltage: 200 - 1000 Volts Forward Current: 1.0 Amp RoHS Device Mini SMA Features 0.154(3.9) 0.138(3.5) -Ideal for surface mount applications 0.012(0.3) Typ. -Easy pick and place -Plastic package has Underwriters Lab. 0.075(1.9) 0.059(1.5) flammability classification 94V-0 -Exceeds environmental standard MIL-S-19500/228 -Low leakage current Mechanical data -Case: Mini SMA/SOD-123 molded plastic 0.067(1.7) 0.051(1.3) -Terminals: solderable per MIL-STD-750 , method 2026 0.028(0.7) Typ. 0.028(0.7) Typ. -Polarity: Indicated by cathode band -Mounting position: Any Dimensions in inches and (millimeter) -Approx. Weight: 0.04 grams Maximum Ratings and Electrical Characterics CURM CURM CURM Symbol Parameter Unit 103-G 104-G 107-G Repetitive Peak Reverse Voltage VRRM 200 400 1000 V Continuous reverse voltage V VR 200 400 1000 RMS Voltage VRMS 140 280 700 V Max. Forward Surge Current 8.3ms single half sine-wave IFSM 30 A superimposed on rate load ( JEDEC method ) Max. Forward rectified Current A Io 1.0 Max. Forward voltage at IF=1.0A VF 1.0 1.3 1.7 V Max. Reverse recovery time (Note 1) 50 75 nS Trr VR=VRRM, TJ=25C IR 5.0 Max. A Reverse Current VR=VRRM, TJ=125C IR 150 TYP. Thermal Resistance (Note 1) RJA 42 C/W TYP. Diode Junction Capacitance C J pF 20 (F=1MHz and applied 4V DC reverse voltage) Operating Junction Temperature T J C -55 to +150 Storage Temperature TSTG -65 to +175 C Note 1: Reverse recovery time test Condition, IF=0.5A , IR=1.0A , IRR=0.25A Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BU007 Page 1 Comchip Technology CO., LTD.SMD Ultra Fast Recovery Rectifiers Rating and Characteristic Curves (CURM103-G Thru CURM107-G) Fig. 2 - Typical Forward Current Derating Curve Fig.1 - Typical Forward Characteristics 1.4 10 1.2 1.0 1.0 0.8 0.1 0.6 P.C.B Mounted on 0.01 0.4 0.2x0.2(5mm*5mm) Tj=25 C Copper pad Areas Pulse width 300uS 0.2 4% duty cycle 0.001 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 25 50 75 100 125 150 175 Forward Voltage, (V) Ambient Temperature, ( C) Fig. 4 - Maximum Non-Repetitive Forward Fig. 3 - Test Circuit Diagram and Reverse Recovery Surge Current Time Characteristics 50 8.3mS Single Half Sine Wave JEDEC methode 50W 10W NONINDUCTIVE NONINDUCTIVE 40 (+) ( ) 30 D.U.T. PULSE 25Vdc (approx.) GENERATOR Tj=25 C (NOTE 2) ( ) (+) 20 1W OSCILLISCOPE NON- (NOTE 1) INDUCTIVE 10 NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 0 1 5 10 50 100 trr Number of Cycles at 60Hz +0.5A Fig.5 - Typical Junction Capacitance 0 175 -0.25A =1MHz and applied 120 4VDC reverse voltage 100 -1.0A 1cm 80 SET TIME BASE FOR 50 / 10ns / cm 60 40 20 0 0.01 0.1 1.0 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BU007 Page 2 Comchip Technology CO., LTD. CURM107-G CURM103-G . CURM 104-G Forward Current, ( A ) Peak surge Forward Current ( A ) Junction Capacitance, (pF) Average Forward Current, ( A )