SMD Ultra Fast Recovery Rectifiers CURN101-HF Thru CURN105-HF Forward current: 1.0A Reverse voltage: 200 to 1000V RoHS Device 1206 Halogen Free 0.142(3.60) 0.126(3.20) Features - GPRC(Glass passivated rectifier chip) inside. 0.083(2.10) R 0.016(0.40) 0.067(1.70) - Glass passivated cavity-free junction. - Low power loss, High efficiency. 0.063(1.60) - High current capability Typ. - Plastic package has UL 94V-0. 0.035(0.90) 0.035(0.90) 0.020(0.50) 0.020(0.50) 0.046(1.16) Mechanical Data 0.034(0.86) - Case: Packed with FRP substrate and epoxy underfilled. - Terminals: Pure Tin plated (Lead-Free), solderable per MIL-STD-750, method 2026. Dimensions in inches and (millimeter) - Polarity: Laser cathode band marking. Circuit Diagram - Weight: 0.012 grams(approx). Absolute Maximum Ratings (at TA=25C unless otherwise noted) CURN CURN CURN CURN CURN Parameter Conditions Symbol Units 101-HF 102-HF 103-HF 104-HF 105-HF Repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Average forward current IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave IFSM 30 25 A Reverse recovery time IF=0.5A,IR=1.0A,Irr=0.25A Trr 50 75 nS Operating junction temperature TJ -65 to +175 C Storage temperature TSTG -65 to +175 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions MIN. TYP. MAX. Unit --- IF =0.1A 0.98 - --- Forward voltage IF =0.5A VF 1.28 - V --- IF =1.0A 1.45 1.70 --- Repetitive peak reverse current VR =Max. VRRM, TA=25C IRRM 0.08 5 uA --- --- Junction capacitance pF VR =4V, f=1.0MHZ CJ 10 Junction to ambient (Note) --- --- R JA 90 Thermal Resistance C/W Junction to lead (Note) --- --- R JL 40 Notes: 1. Thermal resistance from junction to ambient and from junction to lead P.C.B. monuted on 0.20.2(5.0*5.0mm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-JU005 Comchip Technology CO., LTD.CURN101-HF Thru CURN103-HF CURN104-HF Thru CURN105-HF SMD Ultra Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CURN101-HF Thru. CURN105-HF) Fig.1- Forward current derating curve Fig.2- Maximum non-repetitive peak forward surge current 1.0 30 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 0.5 15 10 Inductive or resistive load 5 0.375 (9.5mm) lead length 0 0 0 50 70 100 125 150 175 200 1 10 100 Case temperature, (C) Number of cycles at 60Hz Fig.3- Typical instantaneous forward Fig.4- Typical reverse characteristics characteristics 10 10 o TJ=150 C o TJ=125 C 1.0 1.0 0.1 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.01 0.2 0.6 1.0 1.4 1.8 2.2 0 20 40 60 80 100 110 Instantaneous forward voltage, (V) Percent of rated peak reverse voltage (%) Fig.5 - Typical junction capacitance 200 o TJ = 25 C 10 1 0.1 1 10 100 Reverse voltage, (V) REV:B Company reserves the right to improve product design , functions and reliability without notice. Page 2 QW-JU005 Comchip Technology CO., LTD. Junction capacitance, (pF) Instantaneous forward current, (A) Average forward rectified current, (A) Instantaneous reverse leakage Peak forward surge current, (A) current, (uA)