SMD Super Fast Recovery Rectiers ES1A-HF Thru. ES1J-HF Reverse Voltage: 50 to 600 Volts Forward Current: 1 Amp RoHS Device Halogen Free SMA/DO-214AC Features 0.177(4.50) - For surface mounted applications. 0.157(4.00) - Low prole package. 0.063(1.60) 0.106(2.70) - Glass passivated chip junction. 0.051(1.30) 0.091(2.30) - Super fast reverse recovery time. 0.205(5.20) 0.185(4.70) Mechanical data 0.012(0.31) 0.006(0.15) - Case: SMA 0.087(2.20) - Terminals: Solderable per MIL-STD-750, 0.075(1.90) method 2026. 0.059(1.50) 0.012(0.30) 0.035(0.90) Typ. Circuit Diagram Dimensions in inches and (millimeter) Cathode Anode Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20% ES1A ES1B ES1C ES1D ES1E ES1G ES1J Symbols Parameter Units -HF -HF -HF -HF -HF -HF -HF Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 600 V Maximum average forward rectied current IF(AV) 1 A Peak forward surge current, 8.3ms IFSM 30 single half sine-wave superimposed A on rated load (JEDEC Method) Max. forward voltage at 1A VF 1.0 1.25 1.70 V Maximum DC reverse current Ta = 25C 5 A IR at rated DC blocking voltage Ta =125 C 100 Typical junction capacitance Cj pF 15 at VR = 4V, f = 1MHz Maximum reverse recovery time (Note 1) trr 35 ns Typical thermal resistance (Note 2) R JA 75 C/W Operating and storage temperature range Tj, Tstg -55 ~ +150 C Notes: 1. Measured with IF = 0.5A, IR = 1A, Irr = 0.25A. 2. P.C.B. mounted with 1.0 x 1.0 (2.54 x 2.54 cm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JS009 Page 1 Comchip Technology CO., LTD.SMD Super Fast Recovery Rectiers Rating and Characteristic Curves (ES1A-HF Thru. ES1J-HF) Fig.1 - Max. Average Forward Current Rating Fig.2 - Typical Reverse Characteristics 1.2 300 100 1.0 TJ=125C 0.8 10 0.6 TJ=75C 0.4 1.0 0.2 TJ=25C Single phase half-wave resistive or inductive 0 0.1 0 25 50 75 100 125 150 0 20 40 60 80 100 Case Temperature, ( C) % of PIV.Volts Fig.3 - Typical Forward Characteristic Fig.4 - Typical Junction Capacitance 10 30 TJ=25C ES1A-HF~ES1D-HF 25 1.0 20 ES1E-HF/ES1G-HF 0.1 15 10 0.01 ES1J-HF 5 TJ=25C f=1MHz Vsig=50mVp-p 0.001 0 0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100 Instantaneous Forward Voltage, (V) Reverse Voltage, (V) Fig.5 - Maximum Non-Repetitive Peak Forward Surge Current 35 30 25 20 15 10 5 8.3ms single half sine wave (JEDEC Method) 0 1 10 100 Number of Cycles Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JS009 Page 2 Comchip Technology CO., LTD. Peak Forward Surge Current, (A) Instantaneous Forward Current, (A) Average Forward Current, (A) Junction Capacitance, (pF) Reverse Current, IR (A)