SMD Super Fast Recovery Rectiers ES2AB-HF Thru. ES2JB-HF Reverse Voltage: 50 to 600 Volts Forward Current: 2 Amp RoHS Device Halogen Free SMB/DO-214AA Features 0.185(4.70) - For surface mounted applications. 0.160(4.06) - Low prole package. 0.087(2.20) 0.146(3.70) - Glass passivated chip junction. 0.075(1.90) 0.130(3.30) - Super fast reverse recovery time. 0.213(5.40) Mechanical data 0.200(5.08) 0.012(0.305) 0.006(0.152) - Case: SMB 0.096(2.44) - Terminals: Solderable per MIL-STD-750, 0.084(2.13) method 2026. 0.059(1.50) 0.008(0.20) 0.031(0.80) 0.002(0.05) Circuit Diagram Dimensions in inches and (millimeter) Cathode Anode Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20% ES2AB ES2BB ES2CB ES2DB ES2EB ES2GB ES2JB Symbols Parameter Units -HF -HF -HF -HF -HF -HF -HF Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 600 V Maximum average forward rectied current IF(AV) 2 A at Tc =125C Peak forward surge current, 8.3ms IFSM 60 single half sine-wave superimposed A on rated load Max. forward voltage at 2A VF 1.0 1.25 1.68 V Maximum DC reverse current Ta = 25C 5 A IR at rated DC reverse voltage Ta =125 C 100 Typical junction capacitance Cj pF 40 at VR = 4V, f = 1MHz Maximum reverse recovery time (Note 1) trr 35 ns R JA 60 Typical thermal resistance (Note 2) C/W R JC 20 Operating and storage temperature range Tj, Tstg -55 ~ +150 C Notes: 1. Measured with IF = 0.5A, IR = 1A, Irr = 0.25A. 2. P.C.B. mounted with 2.0 x 2.0 (5 x 5 cm) copper pad areas. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JS008 Page 1 Comchip Technology CO., LTD.SMD Super Fast Recovery Rectiers Rating and Characteristic Curves (ES2AB-HF Thru. ES2JB-HF) Fig.1 - Forward Current Derating Curve Fig.2 - Typical Reverse Characteristics 3.5 300 TJ=125C 100 3.0 2.5 TJ=75C 2.0 10 1.5 TJ=25C 1.0 1.0 0.5 Single phase half-wave 60Hz resistive or inductive load 0 0.1 0 25 50 75 100 125 150 0 20 40 60 80 100 Case Temperature, ( C) % of PIV.Volts Fig.3 - Typical Forward Characteristic Fig.4 - Typical Junction Capacitance 10 300 TJ=25C TJ=25C 100 1.0 ES2AB-HF~ES2DB-HF ES2EB-HF/ES2GB-HF 0.1 10 ES2JB-HF 0.01 TJ=25C f=1MHz Vsig=50mVp-p 0.001 1 0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100 Instantaneous Forward Voltage, (V) Reverse Voltage, (V) Fig.5 - Maximum Non-Repetitive Peak Forward Surge Current 80 70 60 50 40 30 20 8.3ms single half sine wave 10 (JEDEC Method) 0 1 10 100 Number of Cycles Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JS008 Page 2 Comchip Technology CO., LTD. Peak Forward Surge Current, (A) Instantaneous Forward Current, (A) Average Forward Current, (A) Junction Capacitance, (pF) Reverse Current, IR (A)