CO M CHIP Efficient Fast Recovery Rectifiers SMD Diodes Specialist HER301G-G Thru. HER308G-G Voltage: 50 to 1000 V Current: 3.0 A RoHS Device DO-27 Features -Glass passivated chip. -Low forward voltage. -High reliability. 1.000(25.40) Min. -High surge current capability. -High speed switching. 0.375(9.53) 0.285(7.24) Mechanical data 0.209(5.30) DIA. 0.189(4.79) DIA. -Case: JEDEC DO-27 molded plastic. 1.000(25.40) Min. -Epoxy: UL 94V-0 rate flame retardant. -Polarity: Color band denotes cathode end. 0.051(1.30) DIA. 0.047(1.19) DIA. -Lead: Solderable per MIL-STD-202, method 208 guaranteed. Dimensions in inches and (millimeter) -Mounting position: Any -Weight: 0.844 grams Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. HER HER HER HER HER HER HER HER Symbol Parameter Unit 301G-G 302G-G 303G-G 304G-G 305G-G 306G-G 307G-G 308G-G Maximum repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V IT = 5A Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V Maximum average forward rectified current I(AV) 3.0 A TA=25C Maximum instantaneous forward 1.0 1.3 VF 1.7 V voltage at specified current A Maximum DC reverse current IR 5.0 Maximum reverse recovery time (Note 1) ns trr 50 75 Operating temperature range TJ -55 ~ +150 C Storage temperature range TSTG -55 ~ +150 C NOTES: 1. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A(RGI circuit) REV:B QW-BE008 Page 1 Comchip Technology CO., LTD.CO M CHIP Efficient Fast Recovery Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (HER301G-G Thru. HER308G-G) Fig.1- Forward Current Derating Curve Fig.2- Typical Forward Characteristics 100 3.0 HER305G-G Single phase half wave Resistive or inductive load HER301G-G to HER304G-G 2.5 2.0 10 1.5 1.0 1.0 HER306G-G to HER308G-G 0.5 TJ = 25C Pulse width = 300us 0 0.1 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 Ambient Temperature, (C) Instantaneous Forward Voltage, (V) Fig.3- Peak Forward Surge Current Fig.4- Typical Junction Capacitance 180 100 Pulse width 8.3 ms HER301G-G to HER305G-G single half-sine-wave 150 HER306G-G to HER308G-G 120 90 10 TJ = 25C , f = 1MHz 60 30 0 1 100 1 10 1 10 100 Number of Cycles at 60Hz Reverse Voltage, (V) REV:B QW-BE008 Page 2 Comchip Technology CO., LTD. Peak Forward Surge Current, (A) Average Forward Current, (A) Capacitance, (pF) Instantaneous Forward Current, (A)