SMD Schottky Barrier Diode RB521S-30-HF IO = 0.2 A VR = 30 V + RoHS Device Halogen Free - Features SOD-523 - High current capability. 0.008(0.20) 0.051(1.30) REF. 0.043(1.10) - Low forward voltage drop. 0.033(0.85) 0.014(0.35) 0.010(0.25) 0.030(0.75) 0.067(1.70) Mechanical data 0.059(1.50) - Case: SOD-523, molded plastic. 0.028(0.70) 0.020(0.50) - Polarity: Color band denotes cathode end. 0.030(0.77) 0.006(0.15) 0.003(0.08) 0.020(0.51) - Mounting position: Any. 0.003(0.07) 0.000(0.01) Circuit Diagram Dimensions in inches and (millimeter) Maximum Rating (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit Peak reverse voltage VRM 30 V DC reverse voltage 30 VR V Mean rectifying current Io 0.2 A Peak forward surge current 8.3ms single half sine-wave IFSM 1.0 A Typical thermal resistance R JA 667 C/W Power dissipation PD 150 mW Storage temperature range TSTG -50 to +150 C Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit IF = 10mA 0.35 Maximum forward voltage VF V IF = 200mA 0.50 Maximum reverse breakdown voltage IR = 1mA VR 30 V Maximum reverse current A VR = 10V IR 30 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB096 Page 1 Comchip Technology CO., LTD.1000 100 10 1 0.1 0.01 0 100 200 300 400 500 600 1000 o T =100 C 100 a 10 SMD Schottky Barrier Diode o T =25 C a 1 Rating and Characteristic Curves (RB521S-30-HF) 0.1 0 5 10 15 20 25 30 Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 1000 1000 100 Ta=100C 100 10 10 1 Ta=25C 1 0.1 0.01 0.1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 Forward Voltage, VF (mV) Reverse Voltage, VR (V) Fig.3 - Capacitance Characteristics Fig.4 - Power Derating Curve 100 180 Ta = 25C f = 1MHz 150 120 10 90 60 30 1 0 0 5 10 15 20 0 25 50 75 100 125 Reverse Voltage, VR (V) Ambient Temperature, Ta (C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JB096 Page 2 Comchip Technology CO., LTD. o T =100 C a Ta=100C Ta=25C o T =25 C a Capacitance Between Terminals, CT (pF) Forward Current, IF (mA) Power Dissipation, PD (mW) Reverse Current, IR (A)