RB551V-30 Comchip

SMD Schottky Barrier Rectiers RB551V-30-HF Io = 500 mA VR = 20 Volts RoHS Device Halogen Free SOD-323 Features - Low reverse current. 0.071(1.80) - Designed for mounting on small surface. 0.063(1.60) - Extremely thin / leadless package. 0.055(1.40) 0.014(0.35) - Majority carrier conduction. 0.047(1.20) 0.010(0.25) 0.106(2.70) Mechanical data 0.098(2.50) - Case: SOD-323 Standard package, molded plastic. 0.039(1.00)Max. - Terminals: Gold plated, solderable per 0.006(0.15)Max. 0) MIL-STD-750D, method 2026. 0.004(0.10)Max. 0) 0.019(0.475)REF - Mounting position: Any. Dimensions in inches and (millimeter) Circuit Diagram Maximum Ratings (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Repetitive peak reverse voltage VRM 30 V Reverse voltage VR 20 V Average forward current IO 500 mA 8.3ms single half sine-wave superimposed Forward current, surge peak IFSM 2 A on rate load(JEDEC method) Storage temperature TSTG -40 +125 C Junction temperature Tj +125 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit IF = 100 mA 0.36 Forward voltage VF V IF = 500 mA 0.47 A Reverse current VR = 20 V IR 100 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JB011 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Rectiers Rating and Characteristic Curves (RB551V-30-HF) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 100m 10A 125C 10m 1A 1m 75C 100m 100u 25C 10m 10u -25C 1m fu 100 100n 0.0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30 35 40 VF, (V) VR, (V) Fig.3 - Capacitance Between Fig.4 - Derating Curve Terminals Characteristics 1.0 1000.0 100.0 0.5 10.0 0 1.0 0 25 50 75 100 125 150 0.0 10.0 20.0 30 40 TA, (C) VR, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-JB011 Page 2 Comchip Technology CO., LTD. TA=125C TA=75C TA=25C TA=-25C Ct, (PF) IF, (A) Io, (A) Reverse Current, (A)