X-On Electronics has gained recognition as a prominent supplier of SB5100E-G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SB5100E-G Schottky Diodes & Rectifiers are a product manufactured by Comchip. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SB5100E-G Comchip

SB5100E-G electronic component of Comchip
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See Product Specifications
Part No.SB5100E-G
Manufacturer: Comchip
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Low VF ESD 5A 100V Schottky Rectifier
Datasheet: SB5100E-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7624 ea
Line Total: USD 0.76 
Availability - 1549
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1549
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7624
10 : USD 0.5863
100 : USD 0.4369
500 : USD 0.3634
1200 : USD 0.3311
2400 : USD 0.311
4800 : USD 0.2976

4656
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1200
Multiples : 1200
1200 : USD 1.5293
4800 : USD 1.3973

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Termination Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the SB5100E-G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SB5100E-G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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ESD Leaded Schottky Barrier Rectifiers Comchip S M D D i o d e S p e c i a l i s t SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0(25.4) Min. -5.0A operation at TA=75C with no thermal runaway. 0.210(5.3) -For use in low voltage, high frequency invertors free 0.189(4.8) wheeling and polarity protection. -Silicon epitaxial planar chips. 0.375(9.5) -ESD test under IEC6100-4-2 : 0.287(7.3) Standard: >15KV(Air) & 8KV(Contact) -Lead-free part, meet RoHS requirements. Mechanical data 1.0(25.4) Min. 0.052(1.3) -Epoxy: UL94-V0 rated flame retardant 0.048(1.2) -Case: Molded plastic body DO-201AD -Terminals: Solderable per MIL-STD-750 Method 2026 Dimensions in inches and (millimeter) -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 1.12grams Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. SB SB SB SB SB SB SB Symbol Parameter Unit 520E-G 540E-G 545E-G 550E-G 560E-G 580E-G 5100E-G Maximum recurrent peak reverse voltage VRRM 20 40 45 50 60 80 100 V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectified current I(AV) A 5.0 0.5 (12.7mm) lead length at TA=75C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load 150 125 IFSM A (JEDEC method) TL=110C Maximum forward voltage at 5.0A (Note 1) VF V 0.55 0.70 0.85 0.5 Maximum DC reverse current TA=25C IR mA At rated DC blocking voltage TA=100C 50 30 Typical junction capacitance (Note 2) pF CJ 500 R JA 35.0 Typical thermal resistance (Note 3) C/W R JL 15.0 Operating junction temperature range TJ -65 to +125 -65 to +150 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Pulse test : 300S pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.500 (12.7mm) lead length with 2.5x2.5 (63.5x63.5mm) copper pad. REV:A QW-BB043 Page 1 Comchip Technology CO., LTD.ESD Leaded Schottky Barrier Rectifiers Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (SB520E-G Thru. SB5100E-G) Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-repetitive Peak Forward Surge Current 6.0 200 TL=110C 8.3mS single half sine-wave 5.0 (JEDEC Method) 150 4.0 100 SB520E-G ~ SB545E-G SB520E-G ~ SB545E-G 3.0 2.0 SB550E-G ~ SB5100E-G 50 1.0 SB550E-G ~ SB5100E-G single phase half wave 60Hz resistive or inductive load 0 3.75(9.5mm) lead length 1 10 100 0 0 25 50 75 100 125 150 175 O Lead Temperature ( C) Number of Cycles at 60Hz Fig.3 Typical Instantaneous Forward Fig.4A Typical Reverse Characteristics Characteristics 50 100 SB520E-G ~ SB545E-G 10 10 TJ=125C SB580E-G ~ SB5100E-G 1.0 1 TJ=100C 0.1 SB550E-G ~ SB560E-G 0.1 0.01 TJ=25C SB520E-G ~ SB545E-G 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.5 Typical Junction Capacitance per leg Fig.4B Typeical Reverse Characteristic 5 10 10,000 SB550E-G ~ SB5100E-G TJ=150C 4 10 TJ=125C 3 10 1,000 2 TJ=75C 10 1 TJ=25C 10 f=1.0MHz TJ=25C Vsig=50mVp-p 100 1 0 20 40 60 80 100 0.1 1.0 10 100 Reverse Voltage (V) Percent of Rated Peak Reverse Voltage ( %) REV:A QW-BB043 Page 2 Comchip Technology CO., LTD. Junction Capacitacne (pF) Instantaneous Forward Current (A) Average Forward Current (A) Peak Forward Surge Current (A) Instantaneous Reverse Current (uA) Instantaneous Reverse Current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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