ESD Leaded Schottky Barrier Rectifiers Comchip S M D D i o d e S p e c i a l i s t SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0(25.4) Min. -5.0A operation at TA=75C with no thermal runaway. 0.210(5.3) -For use in low voltage, high frequency invertors free 0.189(4.8) wheeling and polarity protection. -Silicon epitaxial planar chips. 0.375(9.5) -ESD test under IEC6100-4-2 : 0.287(7.3) Standard: >15KV(Air) & 8KV(Contact) -Lead-free part, meet RoHS requirements. Mechanical data 1.0(25.4) Min. 0.052(1.3) -Epoxy: UL94-V0 rated flame retardant 0.048(1.2) -Case: Molded plastic body DO-201AD -Terminals: Solderable per MIL-STD-750 Method 2026 Dimensions in inches and (millimeter) -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 1.12grams Electrical Characteristics (at TA=25C unless otherwise noted) Ratings at 25C ambient temperature unless otherwise specified. SB SB SB SB SB SB SB Symbol Parameter Unit 520E-G 540E-G 545E-G 550E-G 560E-G 580E-G 5100E-G Maximum recurrent peak reverse voltage VRRM 20 40 45 50 60 80 100 V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectified current I(AV) A 5.0 0.5 (12.7mm) lead length at TA=75C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load 150 125 IFSM A (JEDEC method) TL=110C Maximum forward voltage at 5.0A (Note 1) VF V 0.55 0.70 0.85 0.5 Maximum DC reverse current TA=25C IR mA At rated DC blocking voltage TA=100C 50 30 Typical junction capacitance (Note 2) pF CJ 500 R JA 35.0 Typical thermal resistance (Note 3) C/W R JL 15.0 Operating junction temperature range TJ -65 to +125 -65 to +150 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Pulse test : 300S pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.500 (12.7mm) lead length with 2.5x2.5 (63.5x63.5mm) copper pad. REV:A QW-BB043 Page 1 Comchip Technology CO., LTD.ESD Leaded Schottky Barrier Rectifiers Comchip S M D D i o d e S p e c i a l i s t RATING AND CHARACTERISTIC CURVES (SB520E-G Thru. SB5100E-G) Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-repetitive Peak Forward Surge Current 6.0 200 TL=110C 8.3mS single half sine-wave 5.0 (JEDEC Method) 150 4.0 100 SB520E-G ~ SB545E-G SB520E-G ~ SB545E-G 3.0 2.0 SB550E-G ~ SB5100E-G 50 1.0 SB550E-G ~ SB5100E-G single phase half wave 60Hz resistive or inductive load 0 3.75(9.5mm) lead length 1 10 100 0 0 25 50 75 100 125 150 175 O Lead Temperature ( C) Number of Cycles at 60Hz Fig.3 Typical Instantaneous Forward Fig.4A Typical Reverse Characteristics Characteristics 50 100 SB520E-G ~ SB545E-G 10 10 TJ=125C SB580E-G ~ SB5100E-G 1.0 1 TJ=100C 0.1 SB550E-G ~ SB560E-G 0.1 0.01 TJ=25C SB520E-G ~ SB545E-G 0.001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.5 Typical Junction Capacitance per leg Fig.4B Typeical Reverse Characteristic 5 10 10,000 SB550E-G ~ SB5100E-G TJ=150C 4 10 TJ=125C 3 10 1,000 2 TJ=75C 10 1 TJ=25C 10 f=1.0MHz TJ=25C Vsig=50mVp-p 100 1 0 20 40 60 80 100 0.1 1.0 10 100 Reverse Voltage (V) Percent of Rated Peak Reverse Voltage ( %) REV:A QW-BB043 Page 2 Comchip Technology CO., LTD. Junction Capacitacne (pF) Instantaneous Forward Current (A) Average Forward Current (A) Peak Forward Surge Current (A) Instantaneous Reverse Current (uA) Instantaneous Reverse Current (mA)