SMD Ultra Fast Recovery Rectiers US1A-HF Thru. US1M-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 1 Amp RoHS Device Halogen Free SMA/DO-214AC 0.177(4.50) 0.157(4.00) Features 0.063(1.60) 0.106(2.70) - For surface mounted applications. 0.051(1.30) 0.091(2.30) - Low prole package. - Glass passivated chip junction. 0.205(5.20) - Easy to pick and place. 0.185(4.70) 0.012(0.31) - High eciency. 0.006(0.15) 0.087(2.20) 0.075(1.90) 0.059(1.50) 0.012(0.30) 0.035(0.90) Typ. Mechanical data - Case: SMA Dimensions in inches and (millimeter) - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram Cathode Anode Maximum Ratings and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specied. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20% US1A US1B US1D US1G US1J US1K US1M Symbols Parameter Units -HF -HF -HF -HF -HF -HF -HF Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectied current IF(AV) 1 A at Tc =125C Peak forward surge current, 8.3ms single half sine-wave superimposed IFSM 30 A on rated load Max. instantaneous forward voltage at 1A VF 1.0 1.3 1.65 V Maximum DC reverse current Ta = 25C 5 IR A at rated DC blocking voltage Ta =125C 100 Maximum reverse recovery time (Note 1) trr 50 75 ns Typical thermal resistance (Note 2) R JA 75 C/W Typical junction capacitance (Note 3) Cj pF 15 Operating and storage temperature range Tj, Tstg -55 ~ +150 C Notes: 1. Measured with IF = 0.5A, IR = 1A, Irr = 0.25A. 2. P.C.B. mounted with 2.0 X 2.0 (5 X 5 cm) copper pad areas. 3. Measured at 1 MHz and applied reverse voltage of 4 V D.C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JU008 Page 1 Comchip Technology CO., LTD.SMD Ultra Fast Recovery Rectiers Rating and Characteristic Curves (US1A-HF Thru. US1M-HF) Fig.1 - Forward Current Derating Curve Fig.2 - Typical Reverse Characteristics 1.2 100 1.0 TJ=125C 0.8 10 0.6 TJ=25C 0.4 1.0 0.2 Single phase half-wave 60Hz resistive or inductive load 0 0.1 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 Case Temperature, (C) Percent of Rated Peak Reverse Voltage, (%) Fig.4 - Maximum Non-Repetitive Peak Fig.3 - Typical Forward Characteristic Forward Surge Current 10 40 TJ=25C 35 US1A-HF~US1D-HF 1.0 30 25 US1G-HF 0.1 20 15 US1J-HF~US1M-HF 0.01 10 5 8.3ms single half sine wave (JEDEC Method) 0.001 0 0 0.5 1.0 1.5 2.0 2.5 1 10 100 Instantaneous Forward Voltage, (V) Number of Cycles Fig.5 - Typical Transient Thermal Impedance Fig.6 - Typical Junction Capacitance 100 100 TJ=25C 10 10 1 1 0.01 0.1 1 10 100 0.1 1 10 100 Reverse Voltage, (V) Pulse Duration, t (sec Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JU008 Page 2 Comchip Technology CO., LTD. Transient Thermal Impedance, (C/W Instantaneous Forward Current, (A) Average Forward Current, (A) Junction Capacitance, (pF) Peak Forward Surge Current, (A) Instantaneous Reverse Current, ( A)