X-On Electronics has gained recognition as a prominent supplier of 1N5822 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5822 Schottky Diodes & Rectifiers are a product manufactured by DC Components. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

1N5822 DC Components

1N5822 electronic component of DC Components
1N5822 DC Components
1N5822 Schottky Diodes & Rectifiers
1N5822  Semiconductors

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See Product Specifications
Part No. 1N5822
Manufacturer: DC Components
Category: Schottky Diodes & Rectifiers
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO27; Package: Ammo Pack
Datasheet: 1N5822 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.91 ea
Line Total: USD 0.91 
Availability - 10462
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10462
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 0.91
10 : USD 0.5978
25 : USD 0.42
100 : USD 0.2996
201 : USD 0.091

   
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Semiconductor Structure
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Load Current
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We are delighted to provide the 1N5822 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5822 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS I 3A F(AV) V 40 V RRM T 150C j V (max) 0.475 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Value Symbol Parameter Unit 1N5820 1N5821 1N5822 20 30 40 V V RRM Repetitive peak reverse voltage I 10 A F(RMS) RMS forward current I 3A F(AV) Average forward current T = 100C = 0.5 L 33 A T = 110C = 0.5 L I 80 A FSM Surge non repetitive forward tp=10ms current Sinusoidal P 1700 W ARM Repetitive peak avalanche tp = 1s Tj = 25C power T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3A 1/51N582x THERMAL RESISTANCES Symbol Parameter Value Unit R Lead length = 10 mm 80 C/W th (j-a) Junction to ambient R Lead length = 10 mm 25 C/W th (j-l) Junction to lead STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit I * 222 mA R Reverse leakage Tj=25CV =V R RRM current 20 20 20 mA Tj = 100C V * 0.475 0.5 0.525 V F Forward voltage drop Tj = 25CI =3A F 0.85 0.9 0.95 V Tj=25CI = 9.4 A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equations : 2 P=0.33xI + 0.035 I for 1N5820 / 1N5821 F(AV) F (RMS ) 2 P=0.33xI + 0.060 I for 1N5822 F(AV) F (RMS ) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward power dissipation versus average forward current (1N5820/1N5821). average forward current (1N5822). PF(av)(W) PF(av)(W) 1.8 2.0 = 0.1 = 0.2 = 0.2 = 0.5 = 0.1 = 0.5 1.8 1.6 = 0.05 1.6 = 0.05 1.4 = 1 1.4 1.2 = 1 1.2 1.0 1.0 0.8 0.8 0.6 0.6 T T 0.4 0.4 0.2 0.2 =tp/T tp =tp/T tp IF(av) (A) IF(av) (A) 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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