KBPC35005T/W thru KBPC3504T/W V = 50 V - 1000 V RRM Silicon Bridge I =35 A F Rectifier Features High efficiency Types up to 1000 V V KBPC-T/W Package RRM Silicon junction Metal case Mechanical Data Case: Mounted in the bridge encapsulation Mounting position: Hole for 10 screw Polarity: Marked on case Maximum ratings, at T = 25 C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW j uses KBPC-W package) ParameterParameter SySymbolmbol ConditionsConditions KKBBPPCC35005T/W35005T/W KKBBPPCC3501T/W3501T/W KKBBPPCC3502T/W3502T/W KKBBPPCC3504T/W3504T/W UnitUnit Repetitive peak reverse voltage V 50 100 200 400 V RRM V RMS reverse voltage 35 70 140 280 V RMS V 200 400 DC blocking voltage 50 100 V DC I T 55 C Continuous forward current 35 35 35 35 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 400 400 400 400 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions KBPC3502T/W KBPC3504T/W Parameter Symbol KBPC35005T/W KBPC3501T/W Unit V I = 17.5 A, T = 25 C 1.1 1.1 V Diode forward voltage F F j 1.1 1.1 V = 50 V, T = 25 C 55 R j 55 I Reverse current A R V = 50 V, T = 100 C 500 500 500 500 R j Thermal characteristics Thermal resistance, junction - R 1.4 1.4 1.4 1.4 C/W thJC case www.genesicsemi.com 1KBPC35005T/W thru KBPC3504T/W www.genesicsemi.com 2