DMN31D5L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 1.5 V = 4.0V GS 30V 0.5A Low Input/Output Leakage 2.0 V = 2.5V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT23 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. UL ideal for high efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Motor Control e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below Backlighting Weight: 0.009 grams (Approximate) SOT23 D D G ESD protected G S Gate Protection Top View S Diode Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN31D5L-7 SOT23 3000/Tape & Reel DMN31D5L-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN31D5L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 0.5 A Continuous Drain Current (Note 6) VGS = 4V I A D State 0.4 T = +75C A Maximum Continuous Body Diode Forward Current (Note 5) 0.3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 5 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 350 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) 357 C/W R JA Total Power Dissipation (Note 6) P 520 mW D Steady State Thermal Resistance, Junction to Ambient (Note 6) 240 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 100A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 30V, V = 0V C DSS DS GS Gate-Source Leakage 10 A I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 1.6 V V V = V , I = 250A GS(TH) DS GS D 1.5 V = 4.0V, I = 10mA GS D Static Drain-Source On-Resistance R DS(ON) 2.0 V = 2.5V, I = 10mA GS D Diode Forward Voltage V 1.2 V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) 50 Input Capacitance C pF iss V = 15V, V = 0V, DS GS 12 Output Capacitance C pF oss f = 1.0MHz 10 Reverse Transfer Capacitance C pF rss Total Gate Charge (V = 4.5V) Q 0.5 nC GS g 1.2 nC Total Gate Charge (VGS = 10V) Qg V = 10V, V = 10V, GS DS Gate-Source Charge 0.2 nC I = 250mA Q D gs Gate-Drain Charge 0.1 nC Q gd Turn-On Delay Time 3.5 ns t D(ON) Turn-On Rise Time 3.3 ns t V = 30V, V = 10V, R DD GS Turn-Off Delay Time t 16.8 ns R = 25, I = 200mA D(OFF) G D Turn-Off Fall Time t 13.8 ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN31D5L March 2018 Diodes Incorporated www.diodes.com Document number: DS40714 Rev. 2 - 2