X-On Electronics has gained recognition as a prominent supplier of RM24C32C-LSNI-B EEPROM across the USA, India, Europe, Australia, and various other global locations. RM24C32C-LSNI-B EEPROM are a product manufactured by Dialog Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

RM24C32C-LSNI-B Dialog Semiconductor

RM24C32C-LSNI-B electronic component of Dialog Semiconductor
RM24C32C-LSNI-B Dialog Semiconductor
RM24C32C-LSNI-B EEPROM
RM24C32C-LSNI-B  Semiconductors

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See Product Specifications
Part No. RM24C32C-LSNI-B
Manufacturer: Dialog Semiconductor
Category: EEPROM
Description: EEPROM 32K 1.65V EEPROM
Datasheet: RM24C32C-LSNI-B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3447
98 : USD 0.3281
196 : USD 0.3243
294 : USD 0.3174
588 : USD 0.3153
1078 : USD 0.3091
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4476
10 : USD 0.715
98 : USD 0.4687
294 : USD 0.4654
588 : USD 0.4588
1078 : USD 0.4425
2548 : USD 0.4108
10094 : USD 0.3933
N/A

Obsolete
0
MOQ : 21
Multiples : 21
21 : USD 0.3447
98 : USD 0.3281
196 : USD 0.3243
294 : USD 0.3174
588 : USD 0.3153
1078 : USD 0.3091
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the RM24C32C-LSNI-B from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RM24C32C-LSNI-B and other electronic components in the EEPROM category and beyond.

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RM24C32C-L 32-Kbit 1.65V Minimum Non-volatile Serial EEPROM Memory 2 I C Bus Preliminary Datasheet Features Memory array: 32Kbit non-volatile serial EEPROM memory Single supply voltage: 1.65V - 3.6V 2 2-wire I C interface 2 Compatible with I C bus modes: -100kHz -400kHz -1MHz Page size: 32 bytes -Byte and Page Write from 1 to 32 bytes Low Energy Byte Write -Byte Write consuming 50 nJ Low power consumption -0.25 mA active Read current -1.0 mA active Write current -1.0 A Standby current Fast Write -Page Write in 0.7 ms (32-byte page) -Byte Write within 30 s Random and sequential Read modes Unlimited read cycles Write protect of the whole memory array 8-lead SOIC, 8-lead TSSOP, 8-pad UDFN, and 6-ball WLCSP packages RoHS-compliant and halogen-free packaging Data Retention: 10 years Industrial Operating Temperature: -40C to 85C Endurance: 10,000 Write Cycles Based on Adesto s proprietary CBRAM technology Description The Mavriq RM24C32C-L is a 32Kbit, serial EEPROM memory device that utilizes Adesto s CBRAM resistive technology. The memory devices use a single low- voltage supply ranging from 1.65V to 3.6V. 2 2 The Mavriq I C device is accessed through a 2-wire I C compatible interface consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL) frequency is 1MHz. The devices have both byte write and page write capability. Page write is 32 bytes. The Byte Write operation of Mavriq memory consumes only 10% of the energy consumed by a Byte Write operation of EEPROM devices of similar size. DS-RM24C32C-L095E1/2018The Page Write operation of Mavriq memory is 4-6 times faster than the Page Write operation of similar EEPROM devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in one operation. External address pins permit up to eight devices on the same data bus. The devices are available in standard 8-pin SOIC, TSSOP, UDFN and Wafer Level Chip Scale packages. 1. Block Diagram Figure 1-1. Block Diagram I/O Buffers and Data VCC Latches I/O SCL Control Page Buffer SDA Logic E0 Y-Decoder Memory E1 Control Logic E2 WP Address Latch 32 Kb to 512 Kb & Resistive Memory Counter GND RM24C32C-L 2 DS-RM24C32C-L095E1/2018 X-Decoder

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation
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