X-On Electronics has gained recognition as a prominent supplier of RM24C512C-LTAI-B EEPROM across the USA, India, Europe, Australia, and various other global locations. RM24C512C-LTAI-B EEPROM are a product manufactured by Dialog Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

RM24C512C-LTAI-B Dialog Semiconductor

RM24C512C-LTAI-B electronic component of Dialog Semiconductor
RM24C512C-LTAI-B Dialog Semiconductor
RM24C512C-LTAI-B EEPROM
RM24C512C-LTAI-B  Semiconductors

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See Product Specifications
Part No. RM24C512C-LTAI-B
Manufacturer: Dialog Semiconductor
Category: EEPROM
Description: EEPROM 512K 1.65V EEPROM
Datasheet: RM24C512C-LTAI-B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3359
N/A

Obsolete
0
MOQ : 100
Multiples : 100
100 : USD 0.5128
200 : USD 0.4362
500 : USD 0.4302
1000 : USD 0.4184
2500 : USD 0.4067
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6993
10 : USD 0.8541
100 : USD 0.5427
500 : USD 0.5386
1000 : USD 0.5187
2000 : USD 0.4842
10000 : USD 0.4622
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7896
4 : USD 0.5916
49 : USD 0.5564
100 : USD 0.5414
N/A

Obsolete
0
MOQ : 19
Multiples : 1
19 : USD 0.3706
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the RM24C512C-LTAI-B from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RM24C512C-LTAI-B and other electronic components in the EEPROM category and beyond.

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RM24C512C-L 512-Kbit 1.65V Minimum Non-volatile Serial EEPROM 2 I C Bus Preliminary Datasheet Features Memory array: 512Kbit non-volatile serial EEPROM memory Single supply voltage: 1.65V - 3.6V 2 2-wire I C interface 2 Compatible with I C bus modes: -100kHz -400kHz -1MHz Page size: 128 bytes -Byte and Page Write from 1 to 128 bytes Low Energy Byte Write -Byte Write consuming 50 nJ Low power consumption -0.25 mA active Read current -1.0 mA active Write current -1.0 A Standby current Fast Write -Page Write in 3 ms (128 byte page) -Byte Write within 60 s Random and sequential Read modes Industrys lowest read cycle latency Unlimited read cycles Write protect of the whole memory array 8-lead SOIC, 8-lead TSSOP, 8-pad UDFN and 6-ball WLCSP packages RoHS-compliant and halogen-free packaging Data Retention: >40 years at 125C Endurance: 100,000 Write Cycles (for both byte and page write cycles) - No degradation across temperature range Industrial Operating Temperature: -40C to 85C No data loss under UV exposure on bare die or WLCSP Based on Adesto s proprietary CBRAM technology Description The Mavriq RM24C512C-L is a 512Kbit, serial EEPROM device that utilizes Adesto s CBRAM resistive memory technology. The memory devices use a single low-voltage supply ranging from 1.65V to 3.6V. 2 2 The MavriqI C device is accessed through a 2-wire I C compatible interface consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL) frequency is 1MHz. The devices have both byte write and page write capability. Page DS-RM24C512C-L082E11/2016write is 128 bytes. The Byte Write operation of Mavriq memory consumes only 10% of the energy consumed by a Byte Write operation of EEPROM devices of similar size. Adesto s EEPROM endurance can be as much as 40X higher than industry standard EEPROM devices operating in byte write mode at 85C. Unlike EEPROMs based on floating gate technology (which require read-modify-write on a whole page for every write operation) CBRAM write endurance is based on the capability to write each byte individually, irrespective of whether the user writes single bytes or an entire page. Additionally, unlike floating gate technology, CBRAM does not experience any degradation of endurance across the full temperature range. By contrast, in order to modify a single byte, most EEPROMs modify and write full pages of 32, 64 or 128 bytes. This provides significantly less endurance for floating gate devices used in byte write mode when compared to page write mode. The Page Write operation of Mavriq memory is 4-6 times faster than the Page Write operation of similar EEPROM devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in one operation. External address pins permit up to eight devices on the same data bus. The devices are available in standard 8-pin SOIC and TSSOP, UDFN and WLCSP packages. RM24C512C-L 2 DS-RM24C512C-L082E11/2016

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation
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