RM24C64C-BTAC-B Dialog Semiconductor

RM24C64C 64Kbit 2.7V Minimum Non-volatile Serial Memory 2 I C Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V 2 2-wire I C interface 2 Compatible with I C bus modes: -100kHz -400kHz Page size: 32 byte -Byte and Page Write from 1 to 32 bytes Low Energy Byte Write -Byte Write consuming 60nJ Low power consumption -1mA active Read current -1.5mA active Write current -5A Standby current Fast Page and Byte Write -Page Write in 1ms -Byte Write in 50s Random and sequential Read modes Write protect of the whole memory array 8-lead SOIC and TSSOP packages RoHS-compliant and halogen-free packaging Based on Adesto s proprietary CBRAM technology Data Retention: 10 years Endurance: 25,000 Write Cycles Unlimited Read Cycles Description The MavriqRM24C64C is an EEPROM-compatible, 64Kbit non-volatile serial memory utilizing Adesto s CBRAM resistive memory technology. The memory devices use a single low-voltage supply ranging from 2.7V to 3.6V. 2 2 The Adesto I C device is accessed through a 2-wire I C compatible interface consisting of a Serial Data (SDA) and Serial Clock (SCL). The maximum clock (SCL) frequency is 400KHz. The devices have both byte write and page write capability. Page write is up to 32 bytes. The Byte Write operation of Mavriq serial memory consumes only 10% of the energy consumed by a Byte Write operation of EEPROM devices of similar size. The Page Write operation of Mavriq memory is 4-6 times faster than the Page Write operation of similar EEPROM devices. Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in one operation. External address pins permit up to eight devices on the same data bus. Devices are available in standard 8-pin SOIC and TSSOP packages. DS-RM24C64C057F1/20181. Block Diagram Figure 1-1. Block Diagram RM24C64C 2 DS-RM24C64C057F1/2018