1N5817 Diodes Incorporated

1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses A Extremely fast switching Low forward voltage drop K Avalanche capability specified DO-41 Description Axial Power Schottky rectifier suited for Switch Table 1. Device summary Mode Power Supplies and high frequency DC to Symbol Value Unit DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high I 1A F(AV) frequency inverters, free wheeling, polarity V 40 V protection and small battery chargers. RRM T 150 C j V (max) 0.45 V F July 2011 Doc ID 6262 Rev 5 1/7 www.st.com 7Characteristics 1N5817, 1N5818, 1N5819 1 Characteristics Table 2. Absolute ratings (limiting values) Value Symbol Parameter Unit 1N5817 1N5818 1N5819 V Repetitive peak reverse voltage 20 30 40 V RRM I Forward rms current 10 A F(RMS) Average forward I T = 125 C, = 0.5 1 A F(AV) L current Surge non repetitive I t = 10 ms Sinusoidal 25 A FSM p forward current Repetitive peak P t = 1 s, T = 25 C 1200 1200 900 W ARM p j avalanche power T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink. Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit R Junction to ambient Lead length = 10 mm 100 C/W th (j-a) R Junction to lead Lead length = 10 mm 45 C/W th (j-l) Table 4. Static electrical characteristics Symbol Parameter Tests conditions 1N5817 1N5818 1N5819 Unit T = 25 C 0.5 0.5 0.5 mA j Reverse leakage (1) I V = V R R RRM current T = 100 C 10 10 10 mA j T = 25 C I = 1 A 0.45 0.50 0.55 V j F (1) V Forward voltage drop F T = 25 C I = 3 A 0.75 0.80 0.85 V j F 1. Pulse test : t = 380 s, < 2% p To evaluate the conduction losses use the following equations : 2 P = 0.3 x I + 0.090 I for 1N5817 / 1N5818 F(AV) F (RMS ) 2 P = 0.3 x I + 0.150 I for 1N5819 F(AV) F (RMS ) 2/7 Doc ID 6262 Rev 5