X-On Electronics has gained recognition as a prominent supplier of 1N5819 across the USA, India, Europe, Australia, and various other global locations. 1N5819 are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for 1N5819, ensuring timely deliveries around the world.

1N5819 Diodes Incorporated

1N5819 electronic component of Diodes Incorporated
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Part No.1N5819
Manufacturer: Diodes Incorporated
Category: Unclassified
Description: Diode Schottky 40V 1A 2-Pin DO-41
Datasheet: 1N5819 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 10.0012 ea
Line Total: USD 30 
Availability - 12
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
12
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 10.0012
20 : USD 7.7831
50 : USD 3.7931
100 : USD 1.4438

   
Manufacturer
Product Category
Product
Peak Reverse Voltage
Forward Continuous Current
Max Surge Current
Configuration
Recovery Time
Forward Voltage Drop
Maximum Reverse Leakage Current
Maximum Power Dissipation
Operating Temperature Range
Mounting Style
Package / Case
Packaging
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We are delighted to provide the 1N5819 from our Diodes Incorporated manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5819 and other electronic components in the Diodes Incorporated manufacturer and beyond.

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1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses A Extremely fast switching Low forward voltage drop K Avalanche capability specified DO-41 Description Axial Power Schottky rectifier suited for Switch Table 1. Device summary Mode Power Supplies and high frequency DC to Symbol Value Unit DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high I 1A F(AV) frequency inverters, free wheeling, polarity V 40 V protection and small battery chargers. RRM T 150 C j V (max) 0.45 V F July 2011 Doc ID 6262 Rev 5 1/7 www.st.com 7Characteristics 1N5817, 1N5818, 1N5819 1 Characteristics Table 2. Absolute ratings (limiting values) Value Symbol Parameter Unit 1N5817 1N5818 1N5819 V Repetitive peak reverse voltage 20 30 40 V RRM I Forward rms current 10 A F(RMS) Average forward I T = 125 C, = 0.5 1 A F(AV) L current Surge non repetitive I t = 10 ms Sinusoidal 25 A FSM p forward current Repetitive peak P t = 1 s, T = 25 C 1200 1200 900 W ARM p j avalanche power T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink. Rth(j-a) dTj Table 3. Thermal resistances Symbol Parameter Value Unit R Junction to ambient Lead length = 10 mm 100 C/W th (j-a) R Junction to lead Lead length = 10 mm 45 C/W th (j-l) Table 4. Static electrical characteristics Symbol Parameter Tests conditions 1N5817 1N5818 1N5819 Unit T = 25 C 0.5 0.5 0.5 mA j Reverse leakage (1) I V = V R R RRM current T = 100 C 10 10 10 mA j T = 25 C I = 1 A 0.45 0.50 0.55 V j F (1) V Forward voltage drop F T = 25 C I = 3 A 0.75 0.80 0.85 V j F 1. Pulse test : t = 380 s, < 2% p To evaluate the conduction losses use the following equations : 2 P = 0.3 x I + 0.090 I for 1N5817 / 1N5818 F(AV) F (RMS ) 2 P = 0.3 x I + 0.150 I for 1N5819 F(AV) F (RMS ) 2/7 Doc ID 6262 Rev 5

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX
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