AL5802-7 Diodes Incorporated

AL5802 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Description Pin Assignments The AL5802 combines a high gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. (Top View) The LED current is set by an external resistor connected from REXT pin (6) to GND pin (4), the internal high gain transistor develops approximately 0.6V across the external resistor. 654 The AL5802 open-collector output can operate from 0.8V to 30V enabling it to operate from 5V to 24V power supplies without Q1 additional components. Q2 PWM dimming of the LED current can be achieved by either driving the BIAS pin (2) with a low impedance voltage source, or driving the EN pin (3) with an external open-collector NPN transistor or open- 123 drain N-channel MOSFET. The AL5802 is available in a SOT26 package and is ideal for driving SOT26 20mA to 120mA LED currents. Applications Features Linear LED driver Reference voltage VRSET = 0.65V LED signs -40 to +125C temperature range Offline LED luminaries 0.8V to 30V open-collector output Negative temperature co-efficient automatically reduces the LED current at high temperatures Low thermal impedance SOT26 with copper leadframe Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Typical Application Circuit Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See AL5802 Pin Descriptions Pin Number Name Function 1 OUT Open-collector LED driver output 2 BIAS Biases the open collector output transistor 3 EN Enable pin for PWM dimming. Provides access to the base of Q2 and collector of Q1 4 GND Ground reference point for setting LED current Feedback pin. 5 FB Should be connected to pin 6. 6 REXT Current sense pin. LED current sensing resistor should be connected from here to GND. Functional Block Diagram Fig. 1 Block Diagram Absolute Maximum Ratings Symbol Characteristics Values Unit V Output voltage relative to GND 30 V OUT BIAS voltage relative to GND (Note 4) 30 V V BIAS LED voltage relative to GND 6 V V FB EN voltage relative to GND 6 V V EN REXT voltage relative to GND V 6 V REXT Output current I 150 mA OUT Operating junction temperature T -40 to +150 C J Storage temperature T -55 to +150 C ST These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability. Note: 4. With pins 5 and 6 connected together. 2 of 11 March 2014 AL5802 Diodes Incorporated www.diodes.com Document number: DS35516 Rev. 9 - 2 ADVANCE INFORMATION NEW PRODUCT