AP2331TD AP2331TD 0.2A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH WITH OUTPUT TRANSIENT DISCHARGE Description Pin Assignments The AP2331TD is a single channel current-limited integrated high-side (Top View) power switcher optimized for hot-swap applications. The devices have fast short-circuit response time for improved overall system robustness and provide a complete protection solution for application subject to 1 GND heavy capacitive loads and the prospect of short circuit. It offers reverse-current blocking, over-current, over-temperature and short- 3 IN circuit protection, as well as controlled rise time and under-voltage lockout functionality. 2 OUT The device is available in SOT23 and SC59 packages. SOT23 Features Quick Turn-off of Output Discharge Path at Power Down (Top View) Input Voltage Range: 2.7V to 5.2V Fast Short-Circuit Response Time 0.4A Accurate Current Limiting GND 1 250m On-Resistance Reverse-Current Blocking 3 IN Built-In Soft-Start with 0.7ms Typical Turn-On Time Over-Current Protection OUT 2 Over-Voltage Protection Short-Circuit and Thermal Protection SC59 ESD Protection: 3kV HBM, 300V MM Ambient Temperature Range: -40C to +85C Available in Green Molding Compound (No Br, Sb) Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) LCD TVs & Monitors Halogen and Antimony Free. Green Device (Note 3) Set-Top Boxes, Residential Gateways UL Recognized, File Number E322375 Laptops, Desktops, Servers IEC60950-1 CB Scheme Certified Printers, Docking Stations, HUBs Smart Phones, e-Readers Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See AP2331TD AP2331TD Pin Descriptions Pin Name Pin Number Functions GND 1 GND OUT 2 Switch Output Pin IN 3 Voltage Input Pin Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Symbol Parameter Ratings Unit ESD HBM Human Body Model ESD Protection 3 kV ESD MM Machine Model ESD Protection 300 V V Input Voltage Relative to GND 6.5 V IN V Output Voltage Relative to GND V +0.3 V OUT IN I LOAD Maximum Continuous Load Current Internal Limited A T Maximum Junction Temperature +150 C JMAX T Storage Temperature Range (Note 4) -65 to +150 C ST Note: 4. UL Recognized Rating from -30C to +70C (Diodes Incorporated qualified T from -65C to +150C). ST Recommended Operating Conditions ( T = +25C, unless otherwise specified.) A Symbol Parameter Min Max Unit V Input Voltage Relative to GND 2.7 5.2 V IN I Output Current 0 0.2 A OUT T Operating Ambient Temperature -40 +85 C A Electrical Characteristics ( T = +25C, V = 5V, unless otherwise specified.) A IN Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit Input UVLO 2.35 2.65 V VUVLO VIN rising Input Quiescent Current 85 125 A I Above UVLO, I = 0 Q OUT Reverse Leakage Current 0.01 0.10 A I V = 0V, V = 5V, I at V REV IN OUT REV IN R Switch On-resistance V = 5V, I = 0.2A 100 250 350 m DS(ON) IN OUT I Over-load Current Limit V = 5V, V = 4V 0.3 0.4 0.5 A LIMIT IN OUT I Short-circuit Current OUT shorted to ground 0.3 0.4 0.5 A OS I Reverse-current Trigger Point V = 5.0V, V = 5.2V 0.20 0.25 A ROCP IN OUT Deglitch Time from Reverse Current Trigger t (Note 6) 0.5 0.7 1.0 ms TRIG to MOSFET Turn Off V Output Over-voltage Trip Point (Note 7) 5.3 5.6 V OVP Debounce Time from Output Over-voltage 15 s tOVP to MOSFET Turn Off Recovery after Turn-off from ROCP and V V 101%*V REC IN OVP C = 0.1F, R = 20 L LOAD t Output Turn-on Time (Note 8) 0.7 ms ON (UVLO to 90% V ) OUT-NOM T Thermal Shutdown Threshold V = 2.7V to 5.25V +150 C SHDN IN T Thermal Shutdown Hysteresis +20 C HYS SOT23 215 C/W Thermal Resistance Junction-to-Ambient JA (Note 9) SC59 255 C/W Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature thermal effects must be taken into account separately. 6. When reverse current triggers at I = 0.20A, the reverse current is continuously clamped at I for 0.7ms deglitch time until MOSFET is turned off. ROCP ROCP 7. During output over-voltage protection, the output draws approximately 60A current. 8. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for input supply slew rate between V /0.2ms to IN V /1ms. IN 9. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 2 of 11 AP2331TD October 2017 Diodes Incorporated www.diodes.com Document number: DS40136 Rev. 1 - 2 NEW PRODUCT NEW PRODUCT